MCH3459 [SANYO]
N-Channel Silicon MOSFET General-Purpose Switching Device Applications; N沟道MOSFET硅通用开关设备的应用
| 型号： | MCH3459 |
| 厂家： | 
SANYO SEMICON DEVICE |
| 描述： | N-Channel Silicon MOSFET General-Purpose Switching Device Applications |
| 文件： | 总4页 (文件大小：40K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : ENN8110
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
MCH3459
Features
•
Low ON-resistance.
•
Ultrahigh-speed switching.
•
4V drive.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Symbol
Conditions
Ratings
Unit
V
V
30
±20
1.8
7.2
0.8
150
DSS
GSS
V
V
I
A
D
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
I
PW≤10µs, duty cycle≤1%
Mounted on a ceramic board (900mm2✕0.8mm)
A
DP
P
W
°C
°C
D
Tch
Tstg
--55 to +150
Electrical Characteristics at Ta=25°C
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
V
I
=1mA, V =0
30
V
µA
µA
V
(BR)DSS
D GS
I
V
V
V
V
=30V, V =0
GS
1
DSS
GSS
DS
GS
DS
DS
I
=±16V, V =0
DS
±10
V
(off)
GS
=10V, I =1mA
1.2
2.6
D
Forward Transfer Admittance
yfs
=10V, I =1A
0.78
1.3
150
290
95
S
D
R
(on)1
DS
I
I
=1A, V =10V
GS
195
410
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
D
Static Drain-to-Source On-State Resistance
R
(on)2
DS
=0.5A, V =4V
GS
D
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Ciss
V
V
V
=10V, f=1MHz
=10V, f=1MHz
=10V, f=1MHz
DS
DS
DS
Coss
Crss
22
16
t (on)
d
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
6.2
4.5
13
t
r
Turn-OFF Delay Time
Fall Time
t (off)
d
t
f
6.4
Marking : LL
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Sem iconductor Com pany
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D1004PE TS IM TB-00000650 No.8110-1/4
MCH3459
Continued from preceding page.
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
Total Gate Charge
Qg
Qgs
Qgd
V
V
V
=10V, V =10V, I =1.8A
3.2
nC
nC
nC
V
DS
DS
DS
GS
D
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
=10V, V =10V, I =1.8A
0.74
0.42
0.93
GS
D
=10V, V =10V, I =1.8A
GS
D
V
SD
I =1.8A, V =0
S GS
1.2
Package Dimensions
unit : mm
Switching Time Test Circuit
2167A
V
=15V
DD
V
IN
0.3
10V
0V
0.15
3
I
=1A
D
V
IN
R =15Ω
L
D
V
OUT
PW=10µs
D.C.≤1%
2
1
0.65
G
2.0
(Bottom view)
3
MCH3459
P.G
50Ω
S
1 : Gate
2 : Source
3 : Drain
1
2
(Top view)
SANYO : MCPH3
I
-- V
I
-- V
D GS
D
DS
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
V
=10V
DS
3.0V
V
=2.5V
GS
0.2
0
0.2
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
DS
0.8
0.9
1.0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
Drain-to-Source Voltage, V
-- V
IT07277
Gate-to-Source Voltage, V
-- V
IT07279
GS
R
(on) -- V
R
DS
(on) -- Ta
DS
GS
700
600
500
400
300
200
500
450
400
350
300
250
200
150
100
Ta=25°C
1.0A
I =0.5A
D
100
0
50
0
0
2
4
6
8
10
12
14
16
18
20
--60 --40 --20
0
20
40
60
80 100 120 140 160
Gate-to-Source Voltage, V
-- V
Ambient Temperature, Ta -- °C
IT07283
IT07281
GS
No.8110-2/4
MCH3459
yfs -- I
I
-- V
SD
D
F
5
5
V
=10V
V
=0
DS
GS
3
2
3
2
1.0
7
5
1.0
3
2
7
5
0.1
7
5
3
2
3
2
0.1
0.01
0.01
0.4
2
3
5
7
2
3
5
7
1.0
2
3
5
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
0.1
Drain Current, I -- A
D
Diode Forward Voltage, V
SD
Ciss, Coss, Crss -- V
DS
-- V
IT07285
IT07287
SW Time -- I
D
3
2
3
2
V
V
=15V
=10V
f=1MHz
DD
GS
100
7
5
100
3
2
7
5
10
t (on)
d
7
5
3
2
3
2
1.0
0.01
10
0
5
10
15
20
25
30
IT07291
2
3
5
7
2
3
5
7
2
3
5
7
0.1
1.0
Drain Current, I -- A
Drain-to-Source Voltage, V
-- V
IT07289
D
DS
V
-- Qg
A S O
GS
10
2
V
=10V
DS
10
7
5
I
=7.2A
9
8
7
6
5
4
3
2
<10µs
DP
I =1.8A
D
3
2
I =1.8A
D
1.0
7
5
3
2
Operation in this area
is limited by R (on).
0.1
7
5
DS
Ta=25°C
Single pulse
3
2
1
0
Mounted on a ceramic board (900mm2✕0.8mm)
0.01
0.01
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
IT07293
2
3
5
7
2
3
5
7
2
3
5
7
10
2
3
5
0.1
1.0
Total Gate Charge, Qg -- nC
Drain-to-Source Voltage, V
-- V
IT08250
DS
P
-- Ta
D
1.0
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta -- °C
IT08251
No.8110-3/4
MCH3459
Note on usage : Since the MCH3459 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer’s
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer’s products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of December, 2004. Specifications and information herein are subject
to change without notice.
PS No.8110-4/4
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