SBE817 [SANYO]

Low IR Schottky Barrier Diode 15V, 2.0A Rectifier; 低IR肖特基势垒二极管的15V , 2.0A整流器
SBE817
型号: SBE817
厂家: SANYO SEMICON DEVICE    SANYO SEMICON DEVICE
描述:

Low IR Schottky Barrier Diode 15V, 2.0A Rectifier
低IR肖特基势垒二极管的15V , 2.0A整流器

二极管 测试
文件: 总4页 (文件大小:54K)
中文:  中文翻译
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Ordering number : ENA0328  
SANYO Sem iconductors  
DATA S HEET  
Low I Schottky Barrier Diode  
R
SBE817  
15V, 2.0A Rectifier  
Applications  
High frequency rectification (switching regulators, converters, choppers).  
Features  
Composite type with 2 low I SBDs in one package, facilitating high density mounting.  
Small switching noise.  
R
Low forward voltage (I =2.0A, V max=0.57V).  
F
F
Low reverse current (V =7.5V, I max=6μA).  
R
R
Ultrasmall package permitting applied sets to be small and slim (Mounting height 0.75mm).  
Specifications  
Absolute Maximum Ratings at Ta=25°C  
Parameter  
Repetitive Peak Reverse Voltage  
Nonrepetitive Peak Reverse Surge Voltage  
Average Output Current  
Surge Forward Current  
Symbol  
Conditions  
Ratings  
Unit  
V
V
V
15  
17  
RRM  
V
RSM  
I
2.0  
20  
A
O
I
50Hz sine wave, 1 cycle  
A
FSM  
Junction Temperature  
Tj  
--55 to +125  
--55 to +125  
°C  
°C  
Storage Temperature  
Tstg  
Marking : SA  
*: The absolute maximum ratings and electrical characteristics refer to those between Terminal 1 and Terminal 7 (or 8),  
and between Terminal 3 and Terminal 5 (or 6).  
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to  
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,  
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be  
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace  
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety  
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case  
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee  
thereof. If you should intend to use our products for applications outside the standard applications of our  
customer who is considering such use and/or outside the scope of our intended standard applications, please  
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our  
customer shall be solely responsible for the use.  
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate  
the performance, characteristics, and functions of the described products in the independent state, and are not  
guarantees of the performance, characteristics, and functions of the described products as mounted in the  
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent  
device, the customer should always evaluate and test devices mounted in the customer  
equipment.  
's products or  
www.semiconductor-sanyo.com/network  
D1008SB MS IM TC-00001735 No. A0328-1/4  
SBE817  
Electrical Characteristics at Ta=25°C  
Ratings  
typ  
Parameter  
Reverse Voltage  
Symbol  
Conditions  
Unit  
min  
max  
V
I
=0.3mA  
15  
V
V
R
R
V 1  
F
I =1.0A  
F
0.45  
0.5  
Forward Voltage  
V 2  
F
I =2.0A  
F
0.52  
0.57  
6
V
Reverse Current  
I
V
V
=7.5V  
μA  
pF  
R
R
Interterminal Capacitance  
Reverse Recovery Time  
Thermal Resistance  
C
=10V, f=1MHz  
35  
R
t
I =I =100mA, See specified Test Circuit.  
When mounted on ceramic substrate (900mm20.8mm)  
10  
ns  
rr  
F R  
Rth(j-a)  
65  
°C / W  
Package Dimensions  
unit : mm (typ)  
Electrical Connection  
7045-004  
1 : Anode1  
2 : NC  
8
7
6
5
3 : Anode2  
0.2  
0.125  
4 : Anode2(NC)  
5 : Cathode2  
6 : Cathode2  
7 : Cathode1  
8 : Cathode1  
8
5
1
2
3
4
Top view  
1
4
0.5  
*: Terminal 4 is used for the purposes such as  
test. Although it is connected to Anode 2,  
please handle it as NC Terminal  
2.0  
1 : Anode1  
2 : NC  
3 : Anode2  
4 : Anode2(NC)  
5 : Cathode2  
6 : Cathode2  
7 : Cathode1  
8 : Cathode1  
SANYO : EMH8  
t
Test Circuit  
rr  
Duty10%  
50Ω  
100Ω  
10Ω  
10μs  
--5V  
t
rr  
I
-- V  
I
-- V  
R
F
F
R
10000  
1000  
100  
10  
3
2
°
C
Ta=125  
1.0  
7
5
100°C  
3
2
0.1  
7
5
1.0  
3
2
0.1  
0.01  
7
0.01  
5
3
2
0.001  
0.001  
0.0001  
0
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
IT14237  
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15  
Forward Voltage, V -- V  
Reverse Voltage, V -- V  
IT14238  
F
R
No. A0328-2/4  
SBE817  
P (AV) -- I  
F
P (AV) -- V  
R R  
(1)Rectangular wave θ=60°  
(2)Rectangular wave θ=120°  
(3)Rectangular wave θ=180°  
(4)Sine wave θ=180°  
O
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
1.4E-05  
1.2E-05  
1.E-05  
8.E-06  
6.E-06  
4.E-06  
Rectangular  
wave  
(1)  
(3)  
(5)  
(4)  
(2)  
(1)  
θ
(2)  
(3)  
360°  
Rectangular  
wave  
360°  
θ
Sine wave  
V
R
180°  
360°  
Sine wave  
360°  
180°  
(4)  
V
R
(1)Rectangular wave θ=60  
°
(2)Rectangular wave θ=120  
(3)Rectangular wave θ=180  
°
°
2.E-06  
0.2  
0
(4)Sine wave θ=180  
(5)DC  
°
0.E+00  
0
0.5  
1.0  
1.5  
2.0  
2.5  
IT14239  
0
2
4
6
8
10  
12  
14  
16  
Average Output Current, I -- A  
O
Average Reverse Voltage, V -- V  
R
IT14240  
C -- V  
Ta -- I  
R
O
5
150  
125  
100  
75  
(1)Rectangular wave θ=60  
°
f=1MHz  
(2)Rectangular wave θ=120  
°
°
3
2
(3)Rectangular wave θ=180  
(4)Sine wave θ=180  
°
(5)DC  
100  
7
5
Rectangular  
50 wave  
θ
3
2
(3)  
360°  
Sine  
25  
wave  
(4)  
(2)  
(1)  
(5)  
180°  
360°  
0
0
10  
0.1  
0.5  
1.0  
1.5  
2.0  
2.5  
IT14241  
2
3
5
7
2
3
5
7
2
3
1.0  
10  
Reverse Voltage, V -- V  
Average Output Current, I -- A  
IT13213  
R
O
I
-- t  
FSM  
24  
20  
Current waveform 50Hz sine wave  
I
S
20ms  
t
16  
12  
8
4
0
2
3
5
7
2
3
5
7
2
3
0.01  
0.1  
1.0  
Time, t -- s  
IT13214  
No. A0328-3/4  
SBE817  
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using  
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition  
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.  
products described or contained herein.  
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all  
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or  
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise  
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt  
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not  
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural  
design.  
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are  
controlled under any of applicable local export control laws and regulations, such products may require the  
export license from the authorities concerned in accordance with the above law.  
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or  
mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise,  
without the prior written consent of SANYO Semiconductor Co.,Ltd.  
Any and all information described or contained herein are subject to change without notice due to  
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the  
SANYO Semiconductor Co.,Ltd. product that you intend to use.  
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed  
for volume production.  
Upon using the technical information or products described herein, neither warranty nor license shall be granted  
with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third  
party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s  
intellectual property rights which has resulted from the use of the technical information and products mentioned  
above.  
This catalog provides information as of December, 2008. Specifications and information herein are subject  
to change without notice.  
No. A0328-4/4  
PS  

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