TF222B [SANYO]
N-channel Silicon Junction FET Condenser Microphone Applications; N沟道硅结型场效应管电容话筒的应用
| 型号： | TF222B |
| 厂家： | 
SANYO SEMICON DEVICE |
| 描述： | N-channel Silicon Junction FET Condenser Microphone Applications |
| 文件： | 总4页 (文件大小：33K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : ENA0171
N-channel Silicon Junction FET
TF222B
Condenser Microphone Applications
Features
•
Especially suited for use in condenser microphone for audio equipments and telephones.
• TF222B is possible to make applied sets smaller and thinner.
• Excellent voltage characteristic.
• Excellent transient characteristic.
• Adoption of FBET process.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Gate-to-Drain Voltage
Symbol
Conditions
Ratings
Unit
V
V
GDO
--20
10
Gate Current
I
G
mA
mA
mW
°C
Drain Current
I
1
D
Allowable Power Dissipation
Junction Temperature
Storage Temperature
P
100
150
D
Tj
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
--20
max
Gate-to-Drain Breakdown Voltage
Cutoff Voltage
V
I
=--100µA
V
V
(BR)GDO
(off)
G
V
GS
V
V
V
V
V
=2V, I =1µA
--0.1
140*
0.5
--1.0
DS
DS
DS
DS
DS
D
Zero-Gate Voltage Drain Current
Forward Transfer Admittance
Input Capacitance
I
=2V, V =0V
GS
350*
µA
mS
pF
pF
DSS
yfs
=2V, V =0V, f=1kHz
GS
1.4
5.0
1.1
Ciss
Crss
=2V, V =0V, f=1MHz
GS
Reverse Transfer Capacitance
=2V, V =0V, f=1MHz
GS
[Ta=25˚C, V =2.0V, R =2.2kΩ, Cin=5pF, See specified Test Circuit.]
CC
L
Voltage Gain
Reduced Voltage Characteristics
G
V
=10mV, f=1kHz
--2.0
--0.6
dB
dB
V
IN
IN
∆G
VV
V
=10mV, f=1kHz, V =2.0→1.5V
CC
--2.0
Continued on next page.
* : The TF222B is classified by I
as follows : (unit : µA)
DSS
Rank
B4
B5
I
140 to 240
210 to 350
DSS
Marking : B
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Sem iconductor Com pany
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D2805GB MS IM TB-00001894
No. A0171-1/4
TF222B
Continued from preceding page.
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
--1.0
Frequency Characteristics
Total Harmonic Distortion
Output Noise Voltage
∆Gvf
f=1kHz to 110Hz
dB
%
THD
V
V
=30mV, f=1kHz
=0V, A curve
0.7
IN
V
--102
dB
NO
IN
Package Dimensions
unit : mm
Test Circuit
7048-001
Voltage gain
Frequency Characteristics
Distortion
Top View
Reduced Voltage Characteristics
2.2k
Ω
V
V
=2V
CC
CC
1.2
3
0.11
=1.5V
33µF
5pF
+
0 to 0.02
1
2
V
THD
VTVM
B
A
0.2
OSC
0.4
Output Impedance
1
2
1 : Drain
2 : Source
3 : Gate
3
Bottom View
SANYO : TSSFP
I
-- V
I
-- V
D DS
D
DS
400
400
300
200
300
200
100
0
100
0
--0.2V
--0.3V
--0.2V
--0.3V
--0.4V
--0.4V
0
1
2
3
4
5
0
0.5
1.0
1.5
2.0
IT04744
Drain-to-Source Voltage, V
DS
-- V
IT04743
Drain-to-Source Voltage, V
DS
-- V
I
-- V
I
-- V
D GS
D
GS
500
400
300
200
500
400
300
200
V
=2V
V
=2V
DS
DS
100
0
100
0
--1.0
--0.8
--0.6
--0.4
--0.2
0
--1.0
--0.8
--0.6
--0.4
--0.2
0
IT04745
IT04746
Gate-to-Source Voltage, V
GS
-- V
Gate-to-Source Voltage, V
GS
-- V
No. A0171-2/4
TF222B
V
(off) -- I
DSS
y
fs -- I
DSS
GS
--0.7
--0.6
--0.5
--0.4
--0.3
2.0
1.8
1.6
1.4
1.2
1.0
V
=2V
V
V
=2V
=0V
DS
DS
GS
I =1µA
D
f=1kHz
--0.2
--0.1
0.8
0.6
0
100
200
300
400
500
IT04747
0
100
200
300
400
500
IT04748
Drain Current, I
DSS
-- µA
Drain Current, I
DSS
-- µA
Ciss -- V
Crss -- V
DS
DS
2
5
V
=0V
V
=0V
GS
GS
f=1MHz
f=1MHz
3
2
10
7
5
1.0
3
2
7
5
1.0
3
0.1
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
0.1
1.0
10
IT10230
1.0
10
IT10231
Drain-to-Source Voltage, V
-- V
Drain-to-Source Voltage, V -- V
DS
DS
G
-- I
∆G
-- I
VV DSS
V
DSS
--0.5
0
∆G
: V =2V→1.5V
G
:
V
=2V
VV CC
V
CC
=10mV
V
=10mV
V
IN
--1.0
--1.5
--2.0
--2.5
--3.0
--3.5
IN
--0.2
--0.4
--0.6
--0.8
--1.0
f=1kHz
f=1kHz
I
:
V =2V
DS
R =2.2kΩ
DSS
L
Cin=5pF
I
: V =2V
DSS DS
--1.2
--1.4
--4.0
--4.5
0
100
200
300
400
500
IT04751
0
100
200
300
400
500
IT04752
Drain Current, I
DSS
-- µA
Drain Current, I -- µA
DSS
THD -- I
P
-- Ta
DSS
D
1.2
1.0
0.8
0.6
0.4
120
100
THD : V =2V
CC
IN
f=1kHz
: V =2V
V
=30mV
I
DSS DS
80
60
40
20
0
0.2
0
0
100
200
300
400
500
IT04753
0
20
40
60
80
100
120
140
160
Drain Current, I
-- µA
Ambient Temperature, Ta -- °C
ITR02650
DSS
No. A0171-3/4
TF222B
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer’s
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer’s products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of December, 2005. Specifications and information herein are subject
to change without notice.
PS
No. A0171-4/4
相关型号：
TF222B-B4
Small Signal Field-Effect Transistor, 0.001A I(D), 1-Element, N-Channel, Silicon, Junction FET, TSSFP, 3 PIN
ONSEMI
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