TF252TH [SANYO]

N-channel Silicon Junction FET Electret Condenser Microphone; N沟道硅结型场效应管电容式麦克风
TF252TH
型号: TF252TH
厂家: SANYO SEMICON DEVICE    SANYO SEMICON DEVICE
描述:

N-channel Silicon Junction FET Electret Condenser Microphone
N沟道硅结型场效应管电容式麦克风

晶体 晶体管 光电二极管 放大器
文件: 总4页 (文件大小:51K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Ordering number : ENA0842  
SANYO Sem iconductors  
DATA S HEET  
N-channel Silicon Junction FET  
TF252TH  
Electret Condenser Microphone  
Applications  
Features  
High gain : G =1.0dB typ (V =2V, R =2.2k, Cin=5pF, V =10mV, f=1kHz).  
CC IN  
V
L
Ultrasmall package facilitates miniaturization in end products.  
Best suited for use in Electret Condenser Microphone for audio equipments and telephones.  
Excellent voltage characteristics.  
Excellent transient characteristics.  
Adoption of FBET process.  
Halogen free compliance.  
Specifications  
Absolute Maximum Ratings at Ta=25°C  
Parameter  
Gate-to-Drain Voltage  
Symbol  
Conditions  
Ratings  
Unit  
V
V
GDO  
--20  
10  
Gate Current  
I
G
mA  
mA  
mW  
°C  
Drain Current  
I
1
D
Allowable Power Dissipation  
Junction Temperature  
Storage Temperature  
Marking: D  
P
100  
150  
D
Tj  
Tstg  
--55 to +150  
°C  
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to  
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,  
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be  
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace  
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety  
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case  
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee  
thereof. If you should intend to use our products for applications outside the standard applications of our  
customer who is considering such use and/or outside the scope of our intended standard applications, please  
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our  
customer shall be solely responsible for the use.  
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate  
the performance, characteristics, and functions of the described products in the independent state, and are not  
guarantees of the performance, characteristics, and functions of the described products as mounted in the  
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent  
device, the customer should always evaluate and test devices mounted in the customer  
equipment.  
's products or  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
70407GB TI IM TC-00000796  
No. A0842-1/4  
TF252TH  
Electrical Characteristics at Ta=25°C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
--20  
max  
Gate-to-Drain Breakdown Voltage  
Cutoff Voltage  
V
I
=--100µA  
V
V
(BR)GDO  
(off)  
G
V
V
V
V
V
V
=2V, I =1µA  
--0.1  
140*  
0.8  
--0.4  
--1.0  
GS  
DS  
DS  
DS  
DS  
DS  
D
Zero-Gate Voltage Drain Current  
Forward Transfer Admittance  
Input Capacitance  
I
=2V, V =0V  
GS  
350*  
µA  
mS  
pF  
pF  
DSS  
yfs  
=2V, V =0V, f=1kHz  
GS  
1.4  
3.1  
Ciss  
Crss  
=2V, V =0V, f=1MHz  
GS  
Reverse Transfer Capacitance  
=2V, V =0V, f=1MHz  
GS  
0.95  
[Ta=25°C, V =2V, R =2.2k, Cin=5pF, See specified Test Circuit.]  
CC  
L
Voltage Gain  
G
V
V
=10mV, f=1kHz  
1.0  
dB  
dB  
dB  
%
V
IN  
IN  
Reduced Voltage Characteristic  
Frequency Characteristic  
Total Harmonic Distortion  
Output Noise Voltage  
G  
VV  
=10mV, f=1kHz, V =2.01.5V  
CC  
--0.6  
--2.0  
--1.0  
Gvf  
f=1kHz to 110Hz  
THD  
V
V
=30mV, f=1kHz  
=0V, A curve  
0.65  
--106  
IN  
V
--102  
dB  
NO  
IN  
* : The TF252TH is classified by I  
as follows : (unit : µA)  
DSS  
Rank  
4
5
I
140 to 240  
210 to 350  
DSS  
Package Dimensions  
unit : mm (typ)  
Test Circuit  
7031-001  
Voltage gain  
Frequency Characteristic  
Distortion  
Reduced Voltage Characteristic  
Top View  
1.4  
0.25  
3
2.2k  
V
V
=2V  
CC  
CC  
=1.5V  
33µF  
5pF  
+
2
1
0.1  
0.2  
0.45  
V
THD  
VTVM  
OSC  
Bottom View  
1 : Drain  
2 : Source  
3 : Gate  
SANYO : VTFP  
I
-- V  
I
-- V  
DS  
D
DS  
D
300  
250  
200  
150  
100  
350  
300  
250  
200  
150  
100  
50  
0
50  
0
--0.30V  
--0.4V  
0
0.5  
1.0  
1.5  
2.0  
IT12440  
0
1
2
3
4
5
Drain-to-Source Voltage, V  
DS  
-- V  
Drain-to-Source Voltage, V  
DS  
-- V  
IT12441  
No. A0842-2/4  
TF252TH  
I
-- V  
I
-- V  
GS  
D
GS  
D
400  
350  
300  
250  
200  
150  
100  
400  
350  
300  
250  
200  
150  
100  
V =2V  
DS  
V =2V  
DS  
50  
0
50  
0
--0.6  
--0.5  
--0.4  
--0.3  
--0.2  
--0.1  
0
--0.6  
--0.5  
--0.4  
--0.3  
--0.2  
--0.1  
0
IT12443  
Gate-to-Source Voltage, V  
GS  
-- V  
IT12442  
Gate-to-Source Voltage, V  
-- V  
GS  
yfs-- I  
V
(off) -- I  
DSS  
GS  
DSS  
--0.60  
--0.55  
--0.50  
--0.45  
--0.40  
--0.35  
--0.30  
1.7  
1.6  
1.5  
1.4  
1.3  
1.2  
V
=2V  
=1µA  
V
V
=2V  
=0V  
DS  
DS  
GS  
I
D
f=1kHz  
1.1  
1.0  
--0.25  
--0.20  
100  
150  
200  
250  
300  
350  
400  
100  
150  
200  
250  
300  
350  
400  
Zero-Gate Voltage Drain Current, I  
DSS  
-- µA IT12444  
Zero-Gate Voltage Drain Current, I  
DSS  
-- µA IT12445  
Ciss -- V  
Crss -- V  
DS  
DS  
10  
3
2
V =0V  
GS  
V =0V  
GS  
f=1MHz  
f=1MHz  
7
5
1.0  
3
2
7
5
1.0  
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
1.0  
10  
1.0  
10  
IT12446  
IT12447  
Drain-to-Source Voltage, V  
-- V  
Drain-to-Source Voltage, V -- V  
DS  
DS  
G
-- I  
G  
-- I  
VV DSS  
V
DSS  
--0.2  
--0.3  
--0.4  
--0.5  
--0.6  
--0.7  
--0.8  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0
G
I
: V =2V  
CC  
IN  
f=1kHz  
G  
: V =2V1.5V  
VV CC  
=10mV  
V
V
=10mV  
V
IN  
f=1kHz  
R =2.2kΩ  
R =2.2kΩ  
L
L
Cin=5pF  
Cin=5pF  
: V =2V  
DSS DS  
I : V =2V  
DSS DS  
--0.9  
--1.0  
--0.2  
--0.4  
100  
150  
200  
250  
300  
350  
400  
100  
150  
200  
250  
300  
350  
400  
Zero-Gate Voltage Drain Current, I  
DSS  
-- µA  
IT12448  
Zero-Gate Voltage Drain Current, I  
DSS  
-- µA IT12449  
No. A0842-3/4  
TF252TH  
THD -- V  
THD -- I  
DSS  
IN  
2
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
THD : V =2V  
CC  
THD : V =2V  
CC  
f=1kHz  
V
=30mV  
IN  
10  
R =2.2k  
f=1kHz  
L
7
5
Cin=5pF  
R =2.2kΩ  
L
I : V =2V  
DSS DS  
Cin=5pF  
I
: V =2V  
3
2
DSS DS  
1.0  
7
5
3
2
0.2  
0
0.1  
0
50  
100  
150  
200  
IT12450  
100  
150  
200  
250  
300  
350  
400  
Input Voltage, V  
-- mV  
Zero-Gate Voltage Drain Current, I  
-- µA IT12451  
DSS  
IN  
P
-- Ta  
D
120  
100  
80  
60  
40  
20  
0
0
20  
40  
60  
80  
100  
120  
140  
160  
Ambient Temperature, Ta -- °C  
IT12453  
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using  
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition  
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.  
products described or contained herein.  
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all  
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or  
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise  
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt  
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not  
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural  
design.  
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are  
controlled under any of applicable local export control laws and regulations, such products may require the  
export license from the authorities concerned in accordance with the above law.  
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or  
mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise,  
without the prior written consent of SANYO Semiconductor Co.,Ltd.  
Any and all information described or contained herein are subject to change without notice due to  
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the  
SANYO Semiconductor Co.,Ltd. product that you intend to use.  
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed  
for volume production.  
Upon using the technical information or products described herein, neither warranty nor license shall be granted  
with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third  
party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's  
intellctual property rights which has resulted from the use of the technical information and products mentioned  
above.  
This catalog provides information as of July, 2007. Specifications and information herein are subject  
to change without notice.  
PS  
No. A0842-4/4  

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