2N6383 [SAVANTIC]
Silicon NPN Power Transistors; 硅NPN功率晶体管型号: | 2N6383 |
厂家: | Savantic, Inc. |
描述: | Silicon NPN Power Transistors |
文件: | 总3页 (文件大小:114K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2N6383 2N6384 2N6385
DESCRIPTION
·With TO-3 package
·Complement to type 2N6648/6649/6650
·DARLINGTON
·High DC current gain
APPLICATIONS
·Designed for low and medium frequency
power application such as power switching
audio amplifer ,hammer drivers and shunt
and series regulators
PINNING
PIN
1
DESCRIPTION
Base
2
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
3
Absolute maximum ratings(Ta=ꢀ )
SYMBOL
PARAMETER
CONDITIONS
VALUE
40
UNIT
2N6383
2N6384
2N6385
2N6383
2N6384
2N6385
VCBO
Collector-base voltage
Open emitter
V
60
80
40
VCEO
Collector-emitter voltage
Open base
V
60
80
VEBO
IC
ICM
IB
Emitter-base voltage
Collector current
Open collector
5
V
A
A
A
W
ꢀ
10
Collector current-peak
Base current
15
0.25
100
200
-65~200
PD
Tj
Total Power Dissipation
Junction temperature
Storage temperature
TC=25ꢀ
Tstg
ꢀ
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-c
Thermal resistance junction to case
1.75
ꢀ/W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2N6383 2N6384 2N6385
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
40
TYP.
MAX
UNIT
2N6383
2N6384
2N6385
Collector-emitter
sustaining voltage
VCEO(SUS)
IC=0.2A ;IB=0
60
V
80
VCEsat-1
VCEsat-2
VBE-1
Collector-emitter saturation voltage IC=5A; IB=10mA
Collector-emitter saturation voltage IC=10A ;IB=100mA
2.0
3.0
2.8
4.5
V
V
V
V
Base-emitter on voltage
Base-emitter on voltage
IC=5A ; VCE=3V
IC=10A ; VCE=3V
VCE=40V; IB=0
VCE=60V; IB=0
VCE=80V; IB=0
VBE-2
2N6383
ICEO
Collector cut-off current 2N6384
2N6385
1.0
mA
V
CE=40V; VBE=-1.5V
0.3
3.0
2N6383
TC=125ꢀ
VCE=60V; VBE=-1.5V
TC=125ꢀ
0.3
3.0
ICEX
Collector cut-off current 2N6384
2N6385
mA
mA
VCE=80V; VBE=-1.5V
TC=125ꢀ
0.3
3.0
IEBO
hFE-1
hFE-2
COB
Emitter cut-off current
DC current gain
VEB=5V; IC=0
10
IC=5A ; VCE=3V
1000
100
20000
DC current gain
IC=10A ; VCE=3V
IE=0; VCB=10V;f=1MHz
Output capacitance
200
pF
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2N6383 2N6384 2N6385
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10mm)
3
相关型号:
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