2N6436 [SAVANTIC]
Silicon PNP Power Transistors; 硅PNP功率晶体管
| 型号： | 2N6436 |
| 厂家： | 
Savantic, Inc. |
| 描述： | Silicon PNP Power Transistors |
| 文件： | 总3页 (文件大小：114K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2N6436 2N6437 2N6438
DESCRIPTION
·With TO-3 package
·High DC current gain
·Fast switching times
·Low collector saturation voltage
·Complement to type 2N6338~2N6341
APPLICATIONS
·For use in industrial-military power amplifier
and switching circuit applications
PINNING(see Fig.2)
PIN
1
DESCRIPTION
Base
F
2
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
3
Absolute maximum ratings(Ta=ꢀ )
SYMBOL
PARAMETER
CONDITIONS
VALUE
-100
-120
-140
-80
UNIT
2N6436
2N6437
2N6438
2N6436
2N6437
2N6438
VCBO
Collector-base voltage
Open emitter
Open base
V
VCEO
Collector-emitter voltage
V
-100
-120
-6
VEBO
IC
Emitter-base voltage
Collector current
Open collector
V
A
A
A
W
ꢀ
-25
ICM
IBC
PD
Tj
Collector current-peak
Base current
-50
-10
Total power dissipation
Junction temperature
Storage temperature
TC=25ꢀ
200
200
Tstg
-65~200
ꢀ
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-c
Thermal resistance junction to case
0.875
ꢀ/W
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2N6436 2N6437 2N6438
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
-80
TYP.
MAX
UNIT
2N6436
2N6437
2N6438
Collector-emitter
sustaining voltage
V(SUS)CEO
IC=-50mA ;IB=0
-100
-120
V
VCEsat-1
VCEsat-2
VBE sat-1
VBE sat-2
ICEX
Collector-emitter saturation voltage IC=-10A; IB=-1.0A
Collector-emitter saturation voltage IC=-25A; IB=-2.5A
-1.0
-1.8
-1.8
-2.5
V
V
V
V
Base-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
IC=-10A; IB=-1.0A
IC=-25A; IB=-2.5A
VCE=Rated VCEO; VEB=-1.5V
TC=150ꢀ
-10
-1.0
µA
mA
ICBO
Collector cut-off current
VCB=Rated VCB; IE=0
VCE= -40V,IB=0
-10
µA
µA
µA
2N6436
Collector
cut-off current
ICEO
2N6437
2N6438
VCE=- 50V,IB=0
-50
VCE= -60V,IB=0
IEBO
hFE-1
hFE-2
hFE-3
COB
fT
Emitter cut-off current
DC current gain
VEB=-6V; IC=0
-100
120
700
IC=-0.5A ; VCE=-2V
IC=-10A ; VCE=-2V
IC=-25A ; VCE=-2V
IE=0 ; VCB=-10V;f=1MHz
IC=-1A ; VCE=-10V;f=10MHz
30
20
12
DC current gain
DC current gain
Output capacitance
Transition frequency
pF
40
MHz
2
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2N6436 2N6437 2N6438
PACKAGE OUTLINE
Fig.2 outline dimensions
3
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