2SA1279 [SAVANTIC]

Silicon PNP Power Transistors; 硅PNP功率晶体管
2SA1279
型号: 2SA1279
厂家: Savantic, Inc.    Savantic, Inc.
描述:

Silicon PNP Power Transistors
硅PNP功率晶体管

晶体 晶体管
文件: 总3页 (文件大小:204K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SavantIC Semiconductor  
Product Specification  
Silicon PNP Power Transistors  
2SA1279  
DESCRIPTION  
·With TO-220F package  
·Low collector saturation voltage  
APPLICATIONS  
·High current switching applications  
PINNING  
PIN  
1
DESCRIPTION  
Base  
2
Collector  
Emitter  
Fig.1 simplified outline (TO-220F) and symbol  
3
Absolute maximum ratings (Ta=25ꢀ )  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
CONDITIONS  
Open emitter  
VALUE  
-60  
UNIT  
V
Open base  
-60  
V
Open collector  
-7  
V
-5  
A
ICM  
Collector current-peak  
Collector dissipation  
Junction temperature  
Storage temperature  
-8  
A
PC  
TC=25ꢀ  
30  
W
Tj  
150  
-55~150  
Tstg  
SavantIC Semiconductor  
Product Specification  
Silicon PNP Power Transistors  
2SA1279  
CHARACTERISTICS  
Tj=25ꢀ unless otherwise specified  
SYMBOL  
V(BR)CEO  
VCEsat  
VBEsat  
ICBO  
PARAMETER  
CONDITIONS  
MIN  
TYP.  
MAX  
UNIT  
V
Collector-emitter breakdown voltage IC=-10mA ; IB=0  
-60  
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
Collector cut-off current  
Emitter cut-off current  
DC current gain  
IC=-3A;IB=-0.15A  
IC=-3A;IB=-0.15A  
VCB=-60V;IE=0  
-0.4  
-1.2  
-1  
V
V
µA  
µA  
IEBO  
VEB=-7V; IC=0  
-1  
hFE-1  
IC=-1A ; VCE=-1V  
IC=-3A ; VCE=-1V  
IC=-1A ; VCE=-4V  
IE=0 ; VCB=-10V;f=1MHz  
70  
30  
240  
hFE-2  
DC current gain  
fT  
Transition frequency  
60  
MHz  
pF  
COB  
Output capacitance  
200  
2
SavantIC Semiconductor  
Product Specification  
Silicon PNP Power Transistors  
2SA1279  
PACKAGE OUTLINE  
Fig.2 Outline dimensions  
3

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