2SA1279 [SAVANTIC]
Silicon PNP Power Transistors; 硅PNP功率晶体管
| 型号： | 2SA1279 |
| 厂家： | 
Savantic, Inc. |
| 描述： | Silicon PNP Power Transistors |
| 文件： | 总3页 (文件大小：204K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1279
DESCRIPTION
·With TO-220F package
·Low collector saturation voltage
APPLICATIONS
·High current switching applications
PINNING
PIN
1
DESCRIPTION
Base
2
Collector
Emitter
Fig.1 simplified outline (TO-220F) and symbol
3
Absolute maximum ratings (Ta=25ꢀ )
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
Open emitter
VALUE
-60
UNIT
V
Open base
-60
V
Open collector
-7
V
-5
A
ICM
Collector current-peak
Collector dissipation
Junction temperature
Storage temperature
-8
A
PC
TC=25ꢀ
30
W
ꢀ
Tj
150
-55~150
Tstg
ꢀ
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1279
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
V(BR)CEO
VCEsat
VBEsat
ICBO
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V
Collector-emitter breakdown voltage IC=-10mA ; IB=0
-60
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
IC=-3A;IB=-0.15A
IC=-3A;IB=-0.15A
VCB=-60V;IE=0
-0.4
-1.2
-1
V
V
µA
µA
IEBO
VEB=-7V; IC=0
-1
hFE-1
IC=-1A ; VCE=-1V
IC=-3A ; VCE=-1V
IC=-1A ; VCE=-4V
IE=0 ; VCB=-10V;f=1MHz
70
30
240
hFE-2
DC current gain
fT
Transition frequency
60
MHz
pF
COB
Output capacitance
200
2
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1279
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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