2SC2987 [SAVANTIC]
Silicon NPN Power Transistors; 硅NPN功率晶体管型号: | 2SC2987 |
厂家: | Savantic, Inc. |
描述: | Silicon NPN Power Transistors |
文件: | 总3页 (文件大小:139K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2987
DESCRIPTION
·With TO-3PN package
·Complement to type 2SA1227
·High power dissipation
APPLICATIONS
·For audio frequency power amplifier
applications
PINNING
PIN
1
DESCRIPTION
Base
Collector;connected to
mounting base
2
Fig.1 simplified outline (TO-3PN) and symbol
3
Emitter
Absolute maximum ratings(Ta=25ꢀ )
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
CONDITIONS
Open emitter
VALUE
140
UNIT
V
Open base
140
V
Open collector
5
V
Collector current (DC)
Collector current-peak
Collector power dissipation
Junction temperature
Storage temperature
12
A
ICM
20
A
PC
TC=25ꢀ
120
W
ꢀ
Tj
150
Tstg
-55~150
ꢀ
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2987
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
VCEsat
VBEsat
ICBO
PARAMETER
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
CONDITIONS
IC=5A ;IB=0.5A
MIN
TYP.
0.6
MAX
1.5
2.0
50
UNIT
V
IC=5A ;IB=0.5A
VCB=140V; IE=0
VEB=3V; IC=0
1.4
V
µA
µA
IEBO
50
hFE-1
hFE-2
fT
DC current gain
IC=2A ; VCE=5V
IC=5A ; VCE=5V
IC=1A ; VCE=5V
IE=0;f=1MHz;VCB=10V
60
40
320
DC current gain
Transition frequency
50
MHz
pF
COB
Collector output capacitance
190
ꢀ hFE-1 Classifications
R
Q
P
60-120
100-200 160-320
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2987
PACKAGE OUTLINE
Fig.2 outline dimensions
3
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