2SC3970 [SAVANTIC]
Silicon NPN Power Transistors; 硅NPN功率晶体管型号: | 2SC3970 |
厂家: | Savantic, Inc. |
描述: | Silicon NPN Power Transistors |
文件: | 总4页 (文件大小:135K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3970 2SC3970A
DESCRIPTION
·With TO-220Fa package
·High speed switching
·High VCBO
·Wide area of safe operation
APPLICATIONS
·For high breakdown voltate ,high-speed
switching applications
PINNING
PIN
1
DESCRIPTION
Base
2
Collector
Emitter
Fig.1 simplified outline (TO-220Fa) and symbol
3
Absolute maximum ratings (Ta=25ꢀ )
SYMBOL
PARAMETER
CONDITIONS
VALUE
800
900
500
8
UNIT
2SC3970
VCBO
Collector-base voltage
Open emitter
V
2SC3970A
VCEO
VEBO
IC
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current-Peak
Base current
Open base
V
V
A
A
A
Open collector
1.5
ICM
IB
3.0
0.5
TC=25ꢀ
Ta=25ꢀ
25
PC
Collector power dissipation
W
2
Junction temperature
Storage temperature
150
-55~150
ꢀ
ꢀ
Tj
Tstg
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3970 2SC3970A
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
V(BR)CEO
VCEsat
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
Collector-emitter breakdown voltage IC=10mA , IB=0
500
V
V
V
Collector-emitter saturation voltage
Base-emitter saturation voltage
IC=0.6A; IB=0.17A
IC=0.6A; IB=0.17A
VCB=800V; IE=0
1.0
1.5
VBEsat
2SC3970
Collector
ICBO
0.1
0.1
mA
mA
cut-off current
2SC3970A
VCB=900V; IE=0
IEBO
hFE-1
hFE-2
fT
Emitter cut-off current
DC current gain
VEB=5V; IC=0
IC=0.1A ; VCE=5V
IC=0.6A ; VCE=5V
IC=0.1A ; VCE=10V;f=1MHz
15
8
DC current gain
Transition frequency
20
MHz
Switching times
Turn-on time
1.0
3.0
0.3
µs
µs
µs
ton
IC=0.6A; IB1=0.17A
IB2=-0.34A;VCC=200V
Storage time
Fall time
ts
tf
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3970 2SC3970A
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3970 2SC3970A
4
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