2SC4596 [SAVANTIC]

Silicon NPN Power Transistors; 硅NPN功率晶体管
2SC4596
型号: 2SC4596
厂家: Savantic, Inc.    Savantic, Inc.
描述:

Silicon NPN Power Transistors
硅NPN功率晶体管

晶体 晶体管
文件: 总3页 (文件大小:120K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SavantIC Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2SC4596  
DESCRIPTION  
·With TO-220Fa package  
·Low collector saturation voltage  
·Wide area of safe operation  
APPLICATIONS  
·For high speed power switching and  
DC-DC converter applications  
PINNING  
PIN  
1
DESCRIPTION  
Base  
2
Collector  
Emitter  
Fig.1 simplified outline (TO-220Fa) and symbol  
3
Absolute maximum ratings(Ta=25ꢀ )  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
CONDITIONS  
Open emitter  
VALUE  
UNIT  
Collector-base voltage  
100  
V
V
V
A
A
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
Open base  
60  
Open collector  
5
5
10  
ICM  
Collector current-peak  
TC=25ꢀ  
Ta=25ꢀ  
25  
PC  
Collector power dissipation  
W
1
Junction temperature  
Storage temperature  
150  
-55~150  
Tj  
Tstg  
SavantIC Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2SC4596  
CHARACTERISTICS  
Tj=25ꢀ unless otherwise specified  
SYMBOL PARAMETER  
CONDITIONS  
MIN  
60  
5
TYP.  
MAX  
UNIT  
V
V(BR)CEO  
V(BR)EBO  
VCEsat-1  
VCEsat-2  
VBEsat-1  
VBEsat-2  
ICBO  
Collector-emitter breakdown voltage IC=10mA , IB=0  
Emitter-base breakdown voltage  
Collector-emitter saturation voltage  
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
Base-emitter saturation voltage  
Collector cut-off current  
IE=50µA , IC=0  
V
IC=3A, IB=0.15A  
IC=4A, IB=0.2A  
0.3  
0.5  
1.2  
1.5  
10  
V
V
IC=3A, IB=0.15A  
IC=4A, IB=0.2A  
V
V
VCB=100V, IE=0  
VEB=5V; IC=0  
µA  
µA  
IEBO  
Emitter cut-off current  
10  
hFE  
DC current gain  
IC=1A ; VCE=2V  
IE=0 ; VCB=10V,f=1MHz  
IC=0.5A ; VCE=10V  
60  
320  
Cob  
Output capacitance  
80  
pF  
fT  
Transition frequency  
120  
MHz  
Switching times  
ton  
Turn-on time  
0.3  
1.5  
0.3  
µs  
µs  
µs  
IC=3A ; RL=10Ω  
IB1= IB2=0.15A  
VCC30V  
ts  
Storage time  
Fall time  
tf  
hFE Classifications  
D
E
F
60-120  
100-200  
160-320  
2
SavantIC Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2SC4596  
PACKAGE OUTLINE  
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)  
3

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