2SC5042 [SAVANTIC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | 2SC5042 |
| 厂家： | 
Savantic, Inc. |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总4页 (文件大小：204K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC5042
DESCRIPTION
·With TO-3PML package
·High breakdown voltage, high reliability.
·High speed
APPLICATIONS
·Ultrahigh-definition CRT display
·Horizontal deflection output applications
PINNING
PIN
1
DESCRIPTION
Base
2
Collector
Emitter
Fig.1 simplified outline (TO-3PML) and symbol
3
Absolute maximum ratings(Ta=25ꢀ )
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
Open emitter
VALUE
UNIT
1600
V
V
V
A
A
Open base
800
Open collector
6
7
16
ICM
Collector current-peak
TC=25ꢀ
60
PC
Collector power dissipation
W
3
Tj
Junction temperature
Storage temperature
150
-55~150
ꢀ
ꢀ
Tstg
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC5042
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
VCEsat
VBEsat
VCEO(SUS)
IEBO
PARAMETER
CONDITIONS
MIN
TYP.
MAX
5
UNIT
V
Collector-emitter saturation voltage IC=5A;IB=1.25 A
Base-emitter saturation voltage
IC=5A;IB=1.25A
1.5
V
Collector-emitter sustaining voltage IC=100mA;IB=0
800
V
Emitter cut-off current
Collector cut-off current
Collector cut-off current
DC current gain
VEB=4V IC=0
1
10
1
mA
µA
mA
ICBO
VCB=800V IE=0
VCE=1600V; RBE=0
IC=1 A ; VCE=5V
IC=5A ; VCE=5V
ICES
hFE-1
15
4
25
7
hFE-2
DC current gain
Switching times
tstg
Storage time
2.0
0.2
µs
µs
IC=4A;RL=50Ω
IB1=0.7A;- IB2=2A
VCC=200V
tf
Fall time
0.1
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC5042
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC5042
4
相关型号：
2SC5048
NPN TRIPLE DIFFUSED MESA TYPE (HOREZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS)
TOSHIBA
©2020 ICPDF网 联系我们和版权申明