首页 > 2SD1065

2SD1065

更新时间：2025-06-28 07:59:59
品牌：SAVANTIC
描述：Silicon NPN Power Transistors

PDF下载

中文翻译

免费 PCB/SMT

2SD1065 概述

Silicon NPN Power Transistors 硅NPN功率晶体管

2SD1065 数据手册

通过下载2SD1065数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。

PDF下载
SavantIC Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2SD1065  
DESCRIPTION  
·With TO-3PN package  
·Complement to type 2SB829  
·Wide area of safe operation  
·Low collector saturation voltage  
APPLICATIONS  
·Relay drivers,  
·High-speed inverters,  
·Converters,  
·General high-current switching applications  
.
PINNING  
PIN  
1
DESCRIPTION  
Base  
Collector;connected to  
mounting base  
2
3
Emitter  
Absolute maximum ratings(Tc=25ꢀ )  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
CONDITIONS  
Open emitter  
VALUE  
60  
UNIT  
V
V
V
A
A
W
ꢀ
Open base  
50  
Open collector  
6
Collector current (DC)  
Collector current -peak  
Collector power dissipation  
Junction temperature  
Storage temperature  
15  
ICM  
20  
PC  
TC=25ꢀ  
90  
Tj  
150  
-55~150  
Tstg  
ꢀ
SavantIC Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2SD1065  
CHARACTERISTICS  
Tj=25ꢀ unless otherwise specified  
SYMBOL  
V(BR)CEO  
V(BR)CBO  
V(BR)EBO  
VCEsat  
ICBO  
PARAMETER  
Collector-emitter breakdown voltage  
Collector-base breakdown voltage  
Emitter-base breakdown voltage  
Collector-emitter saturation voltage  
Collector cut-off current  
CONDITIONS  
IC=1mA ;RBE=∞  
MIN  
50  
60  
6
TYP.  
MAX  
UNIT  
V
IC=1mA ;IE=0  
IE=1mA ;IC=0  
IC=8A; IB=0.4A  
VCB=40V; IE=0  
VEB=4V; IC=0  
IC=1A ; VCE=2V  
IC=8A ; VCE=2V  
IC=1A ; VCE=5V  
V
V
0.18  
0.4  
0.1  
0.1  
280  
V
mA  
mA  
IEBO  
Emitter cut-off current  
hFE-1  
DC current gain  
70  
30  
hFE-2  
DC current gain  
fT  
Transition frequency  
20  
MHz  
Switching times  
ton  
tstg  
tf  
Turn-on time  
0.20  
0.10  
1.00  
µs  
µs  
µs  
IC=2.0A; IB1=-IB2=0.2A  
VCC=20V;RL=10Ω  
Storage time  
Fall time  
ꢀ hFE-1 Classifications  
Q
R
S
70-140  
100-200 140-280  
2
SavantIC Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2SD1065  
PACKAGE OUTLINE  
Fig.2 outline dimensions  
3
SavantIC Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2SD1065  
4

2SD1065 相关器件

型号 制造商 描述 价格 文档
2SD1065-Q ONSEMI Power Bipolar Transistor, 15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3PB, 3 PIN 获取价格
2SD1065-R ONSEMI Power Bipolar Transistor, 15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3PB, 3 PIN 获取价格
2SD1065Q ETC TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 15A I(C) | TO-218VAR 获取价格
2SD1065R ETC TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 15A I(C) | TO-218VAR 获取价格
2SD1065S ONSEMI TRANSISTOR,BJT,NPN,50V V(BR)CEO,15A I(C),TO-218VAR 获取价格
2SD1068 SONY TENTATIVE 获取价格
2SD1069 TOSHIBA SILICON NPN DOUBLE DIFFUSED TYPE (PCT PROCESS) 获取价格
2SD1069 ISC isc Silicon NPN Power Transistor 获取价格
2SD106A ETC Ultra-compact dual SCALE driver for IGBTs with blocking voltages up to 1200V 获取价格
2SD106AI ETC 2SD106AI Dual SCALE Driver Core for IGBTs and Power MOSFETs 获取价格

2SD1065 相关文章

  • 意法半导体中国市场突围：双供应链战略铸就 “芯” 蓝图
    2025-06-30
    28
  • 小米首款 AI 眼镜正式亮相，芯片市场迎来哪些新机遇？
    2025-06-30
    24
  • 剖析汽车安全气囊控制单元：从拆解看核心技术
    2025-06-30
    18
  • AI 时代算力困局待解，晶圆级芯片潜力无限
    2025-06-30
    42

    • 热门型号

  • 1N5930
  • 1N5942B
  • 1N4001
  • MBR3050CT
  • RTA02-8D
  • 4116T
  • 5KP43A/4
  • 1N5260A
  • MC79L05
  • BZX85C30
  • 9510-G
  • W2PE-54WZ-P
  • 1N6063
  • 2SA673
  • 20IMX35
    • Hi,有什么可以帮您？ 在线客服 或 微信扫码咨询
  • 概述
  • 数据手册
    • 2025 ICPDF网 联系我们和版权申明:QQ 272164286