2SD1163 [SAVANTIC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | 2SD1163 |
| 厂家： | 
Savantic, Inc. |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：98K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1163,2SD1163A
DESCRIPTION
·Wit
h TO-220 package
·Low collector saturation voltage
APPLICATIONS
·TV horizontal deflection output,
PINNING
PIN
1
DESCRIPTION
Base
Collector;connected to
mounting base
2
3
Emitter
Absolute maximum ratings (Ta=25ꢀ )
SYMBOL
PARAMETER
CONDITIONS
VALUE
300
350
120
150
6
UNIT
2SD1163
2SD1163A
2SD1163
2SD1163A
VCBO
Collector-base voltage
Open emitter
V
V
VCEO
Collector-emitter voltage
Open base
VEBO
IC
Emitter-base voltage
Collector current
Open collector
V
A
A
A
7
ICM
Collector current-peak
Collector current-surge
Collector power dissipation
Junction temperature
Storage temperature
10
IC(surge)
PC
20
TC=25ꢀ
40
W
ꢀ
Tj
150
-55~150
Tstg
ꢀ
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1163,2SD1163A
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
V(BR)CEO
V(BR)EBO
VCEsat
PARAMETER
CONDITIONS
MIN
120
150
6
TYP
MAX
UNIT
2SD1163
Collector-emitter
breakdown voltage
IC=10mA ;RBE=∞
V
V
V
2SD1163A
Emitter-base breakdown voltage
IE=10mA ;IC=0
IC=5A, IB=0.5A
2SD1163
2.0
1.0
1.2
5
Collector-emitter
saturation voltage
2SD1163A
VBEsat
Base-emitter saturation voltage
IC=5A, IB=0.5A
VCB=300V;IE=0
V
2SD1163
Collector
mA
mA
ICBO
cut-offcurrent
2SD1163A
V
CB=350V;IE=0
5
hFE
DC current gain
IC=5A ; VCE=5V
25
Switching times
tf
Fall time
ICM=3.5A;IB1 =0.45A
0.5
µs
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1163,2SD1163A
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
3
相关型号：
2SD1163A
Power Bipolar Transistor, 7A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
CDIL
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