2SD1773 [SAVANTIC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | 2SD1773 |
| 厂家： | 
Savantic, Inc. |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：109K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1773
DESCRIPTION
·With TO-220Fa package
·DARLINGTON
·Complement to type 2SB1193
·High speed switching
APPLICATIONS
·For medium speed switching applications
PINNING
PIN
1
DESCRIPTION
Base
2
Collector
Emitter
Fig.1 simplified outline (TO-220Fa) and symbol
3
Absolute maximum ratings(Ta=25ꢀ )
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
CONDITIONS
VALUE
UNIT
Open emitter
Open base
120
V
V
V
A
A
120
Open collector
7
Collector current (DC)
Collector current-Peak
8
12
ICM
Ta=25ꢀ
TC=25ꢀ
2
PC
Collector power dissipation
W
50
Junction temperature
Storage temperature
150
-55~150
ꢀ
ꢀ
Tj
Tstg
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1773
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
VCEO(SUS)
V(BR)EBO
VCEsat-1
VCEsat-2
VBEsat-1
VBEsat-2
ICBO
PARAMETER
CONDITIONS
MIN
120
7
TYP.
MAX
UNIT
V
Collector-emitter sustaining voltage IC=2A , L=10mH
Emitter-base breakdown voltage
IE=50mA ;IC=0
V
Collector-emitter saturation voltage IC=4A ;IB=8mA
Collector-emitter saturation voltage IC=8A ;IB=80mA
1.5
3.0
V
V
Base-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Collector cut-off current
DC current gain
IC=4A ;IB=8mA
2.0
V
IC=8A ;IB=80mA
VCB=120V ;IE=0
3.5
V
100
10
µA
µA
ICEO
VCE=100V ;IB=0
hFE
IC=4A ; VCE=3V
1000
20000
fT
Transition frequency
IC=0.5A ; VCE=10V,f=1MHz
20
MHz
Switching times
Turn-on time
0.7
6.0
2.0
µs
µs
µs
ton
IC=4A ;IB1=8mA
IB2=-8mA; VCC=50V
Storage time
Fall time
ts
tf
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1773
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
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