2SD2349 [SAVANTIC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | 2SD2349 |
| 厂家： | 
Savantic, Inc. |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：240K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD2349
DESCRIPTION
·With TO-3P(H)IS package
·Built-in damper diode
·High voltage ,high speed
·Low saturation voltage
APPLICATIONS
·Horizontal deflection output for color TV
PINNING
PIN
1
DESCRIPTION
Base
2
Collector
Emitter
Fig.1 simplified outline (TO-3P(H)IS) and symbol
3
Absolute maximum ratings (Ta=25ꢀ )
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
VALUE
1500
600
5
UNIT
Open emitter
Open base
V
Open collector
V
A
A
A
W
ꢀ
±10
ICM
Collector current-peak
Base current
±20
IB
5
PC
Collector power dissipation
Junction temperature
Storage temperature
TC=25ꢀ
50
150
-55~150
Tj
Tstg
ꢀ
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD2349
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
V(BR)EBO
VCEsat
VBEsat
ICBO
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V
Emitter-base breakdown voltage
IE=300mA , IC=0
5
Collector-emitter saturation voltage IC=7A ;IB=1.4A
5.0
1.5
1
V
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
IC=7A ;IB=1.4A
VCB=1500V; IE=0
VEB=5V; IC=0
V
mA
mA
IEBO
83
10
6
250
hFE-1
hFE-2
fT
IC=1A ; VCE=5V
IC=7A ; VCE=5V
IC=0.1A ; VCE=10V
IE=0 ; VCB=10V;f=1MHz
IF=7A
DC current gain
9
Transition frequency
Collector output capacitance
Diode forward voltage
Storage time
1
3
MHz
pF
V
COB
170
1.8
12
VF
ts
µs
ICP=7A ;IB1=1.4A;fH=15.75kHz
Fall time
0.7
µs
tf
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD2349
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
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