2SD882 [SAVANTIC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | 2SD882 |
| 厂家： | 
Savantic, Inc. |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总4页 (文件大小：163K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD882
DESCRIPTION
·
·With TO-126 package
·Complement to type 2SB772
APPLICATIONS
·Audio amplifier
·Voltage regulator
·DC-DC converter
·Relay driver
PINNING
PIN
1
DESCRIPTION
Emitter
Collector;connected to
mounting base
2
3
Base
Absolute maximum ratings(Ta=25ꢀ )
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
CONDITIONS
Open emitter
VALUE
UNIT
40
V
V
V
A
A
Open base
30
Open collector
5
Collector current (DC)
Collector current-peak
3
ICM
7
1
Ta=25ꢀ
TC=25ꢀ
PD
Total power dissipation
W
10
Tj
Junction temperature
Storage temperature
150
-55~150
ꢀ
ꢀ
Tstg
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD882
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
V(BR)CEO
VCEsat
VBEsat
ICBO
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V
Collector-emitter breakdown voltage IC=10mA ;IB=0
30
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
IC=2.0A; IB=0.2A
IC=2.0A ;IB=0.2A
VCB=30V; IE=0
0.5
2.0
1
V
V
µA
µA
IEBO
VEB=3V; IC=0
1
hFE-1
DC current gain
IC=20mA ; VCE=2V
IC=1A ; VCE=2V
IC=0.1A ; VCE=5V
f=1MHz ; VCB=10V
30
60
hFE-2
DC current gain
400
fT
Transition frequency
90
45
MHz
pF
COB
Collector output capacitance
ꢀ hFE-2 Classifications
R
Q
P
E
60-120
100-200
160-320
200-400
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD882
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD882
4
相关型号：
2SD882-BP
Power Bipolar Transistor, 3A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3
MCC
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