BDX87C [SAVANTIC]

Silicon NPN Power Transistors; 硅NPN功率晶体管
BDX87C
型号: BDX87C
厂家: Savantic, Inc.    Savantic, Inc.
描述:

Silicon NPN Power Transistors
硅NPN功率晶体管

晶体 晶体管 局域网
文件: 总3页 (文件大小:111K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SavantIC Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
BDX87C  
DESCRIPTION  
·With TO-3 package  
·Complement to type BDX88C  
·DARLINGTON  
APPLICATIONS  
·Designed for use in power linear and  
switching application.  
PINNING (See Fig.2)  
PIN  
1
DESCRIPTION  
Base  
2
Emitter  
Fig.1 simplified outline (TO-3) and symbol  
3
Collector  
Absolute maximum ratings(Ta=25)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
CONDITIONS  
Open emitter  
VALUE  
100  
100  
5
UNIT  
V
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
Open base  
V
Open collector  
V
12  
A
ICM  
Collector current(peak)  
Base current  
18  
A
IB  
0.2  
A
PT  
Total power dissipation  
Max. operating Junction temperature  
Storage temperature  
TC=25ꢀ  
120  
200  
-65~200  
W
Tj  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
MAX  
UNIT  
Rth j-c  
Thermal resistance from junction to case  
1.45  
/W  
SavantIC Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
BDX87C  
CHARACTERISTICS  
Tj=25ꢀ unless otherwise specified  
SYMBOL  
VCEO(SUS)  
VCEsat-1  
VCEsat-2  
VBEsat  
VBE  
PARAMETER  
CONDITIONS  
MIN  
TYP.  
MAX  
UNIT  
Collector-emitter sustaining voltage IC=0.1A ; IB=0  
Collector-emitter saturation voltage IC=6A ;IB=24mA  
Collector-emitter saturation voltage IC=12A ;IB=120mA  
100  
V
V
V
V
V
2.0  
3.0  
4.0  
2.8  
Base-emitter saturation voltage  
Base-emitter on voltage  
DC current gain  
IC=12A ;IB=120mA  
IC=6A ; VCE=3V  
IC=5A ; VCE=3V  
IC=6A ; VCE=3V  
IC=12A ; VCE=3V  
hFE-1  
1000  
750  
hFE-2  
DC current gain  
18000  
hFE-3  
DC current gain  
100  
VCB=100V; IE=0  
TC=150ꢀ  
0.5  
5.0  
ICBO  
Collector cut-off current  
Collector cut-off current  
Emitter cut-off current  
Diode forward voltage  
Diode forward voltage  
mA  
mA  
mA  
V
ICEO  
VCE=50V; IB=0  
VEB=5V; IC=0  
IF=3A  
1.0  
1.0  
1.8  
IEBO  
VF-1  
VF-2  
IF=8A  
2.5  
V
2
SavantIC Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
BDX87C  
PACKAGE OUTLINE  
Fig.2 Outline dimensions  
3

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