BU508 [SAVANTIC]

Silicon NPN Power Transistors; 硅NPN功率晶体管


型号：	BU508
厂家：	Savantic, Inc.
描述：	Silicon NPN Power Transistors 硅NPN功率晶体管晶体晶体管开关局域网
文件：	总3页 (文件大小：137K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SavantIC Semiconductor

Product Specification

Silicon NPN Power Transistors

BU508

DESCRIPTION

·With TO-3PN package

·High voltage

·High speed switching

APPLICATIONS

·For use in horizontal deflection circuits of

large screen colour TV receivers.

PINNING

DESCRIPTION

Base

Collector;connected to

mounting base

Fig.1 simplified outline (TO-3PN) and symbol

Emitter

Absolute maximum ratings (Ta=25ꢀ )

SYMBOL

PARAMETER

CONDITIONS

Open emitter

VALUE

UNIT

V_CBO

Collector-base voltage

1500

V_CEO

V_EBO

I_C

Collector-emitter voltage

Emitter-base voltage

Open base

700

ꢀ

Open collector

Collector current (DC)

Collector current (Pulse)

Collector power dissipation

Junction temperature

Storage temperature

I_CM

P_C

T_C=25ꢀ

125

150

-65~150

T_j

T_stg

ꢀ

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Thermal resistance junction case

1.0

ꢀ/W

R_{th j-c}

SavantIC Semiconductor

Product Specification

Silicon NPN Power Transistors

BU508

CHARACTERISTICS

Tj=25ꢀ unless otherwise specified

SYMBOL

V_(BR)EBO

V_CEO(SUS)

V_CEsat

V_BEsat

I_CES

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

Emitter-base breakdown voltage

I_E=10mA; I_C=0

Collector-emitter sustaining voltage I_C=100mA; I_B=0

Collector-emitter saturation voltage I_C=4.5A; I_B=2A

700

5.0

1.3

Base-emitter saturation voltage

Collector cut-off current

Emitter cut-off current

DC current gain

I_C=4.5A; I_B=2A

V_CE=1500V; V_BE=0

T_C=125°C

1.0

2.0

I_EBO

V_EB=5V; I_C=0

0.1

h_FE

I_C=1A ; V_CE=5V

I_C=0.1A ; V_CE=5V

f_T

Transition frequency

Storage time

MHz

µs

t_s

I_C=4.5A ; V_CC=140V

I_B=1.8A; L_C=0.9mH

L_B=3µH

t_f

Fall time

0.55

µs

SavantIC Semiconductor

Product Specification

Silicon NPN Power Transistors

BU508

PACKAGE OUTLINE

Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)

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