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BUT12 [SAVANTIC]

Silicon NPN Power Transistors; 硅NPN功率晶体管
BUT12
型号： BUT12
厂家： Savantic, Inc.    Savantic, Inc.
描述：

Silicon NPN Power Transistors
硅NPN功率晶体管

晶体 晶体管
文件： 总3页 (文件大小：100K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
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SavantIC Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
BUT12 BUT12A  
DESCRIPTION  
·With TO-220C package  
·High voltage ,high speed  
APPLICATIONS  
·Converters  
·Inverters  
·Switching regulators  
·Motor control systems  
PINNING  
PIN  
1
DESCRIPTION  
Base  
Collector;connected to  
mounting base  
2
3
Emitter  
Absolute maximum ratings (Tc=25ꢀ )  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
850  
1000  
400  
450  
9
UNIT  
BUT12  
VCBO  
Collector-base voltage  
Open emitter  
V
V
BUT12A  
BUT12  
VCEO  
Collector-emitter voltage  
Open base  
BUT12A  
VEBO  
IC  
ICM  
IB  
Emitter-base voltage  
Collector current  
Open collector  
V
A
A
A
a
8
Collector current-peak  
Base current  
20  
4
IBM  
Ptot  
Tj  
Base current-peak  
Total power dissipation  
Junction temperature  
Storage temperature  
6
Tmb≤25ꢀ  
100  
150  
-65~150  
W
ꢀ
Tstg  
ꢀ
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
VALUE  
UNIT  
Rth j-mb  
Thermal resistance from junction to mounting base  
1
K/W  
SavantIC Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
BUT12 BUT12A  
CHARACTERISTICS  
Tj=25ꢀ unless otherwise specified  
SYMBOL  
PARAMETER  
CONDITIONS  
IC=0.1A; IB=0, L=25mH  
IC=6A; IB=1.2A  
MIN  
400  
450  
TYP.  
MAX  
UNIT  
BUT12  
BUT12A  
BUT12  
Collector-emitter  
sustaining voltage  
VCEO(SUS)  
V
Collector-emitter  
saturation voltage  
VCEsat  
1.5  
1.5  
V
V
BUT12A IC=5A; IB=1A  
BUT12  
IC=6A; IB=1.2A  
Base-emitter  
saturation voltage  
VBEsat  
BUT12A IC=5A; IB=1A  
V
CE=Rated VCES ;VBE=0  
1.0  
3.0  
ICES  
Collector cut-off current  
Emitter cut-off current  
DC current gain  
mA  
mA  
Tj=125ꢀ  
IEBO  
VEB=9V; IC=0  
10  
35  
35  
hFE-1  
IC=10mA ; VCE=5V  
IC=1A ; VCE=5V  
10  
10  
hFE-2  
DC current gain  
Switching times resistive load  
ton  
Turn-on time  
Storage time  
Fall time  
1.0  
4.0  
0.8  
µs  
µs  
µs  
For BUT12  
IC=6A; IB1=- IB2=1.2A  
ts  
For BUT12A  
IC=5A; IB1=- IB2=1A  
tf  
2
SavantIC Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
BUT12 BUT12A  
PACKAGE OUTLINE  
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)  
3

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