BUT18AF [SAVANTIC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | BUT18AF |
| 厂家： | 
Savantic, Inc. |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：107K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BUT18F BUT18AF
DESCRIPTION
·With TO-220Fa package
·High voltage ,high speed
APPLICATIONS
·Converters
·Inverters
·Switching regulators
·Motor control systems
PINNING
PIN
1
DESCRIPTION
Base
2
Collector
Emitter
Fig.1 simplified outline (TO-220Fa) and symbol
3
Absolute maximum ratings (Tc=25ꢀ )
SYMBOL
PARAMETER
CONDITIONS
VALUE
850
1000
400
450
9
UNIT
BUT18F
BUT18AF
BUT18F
BUT18AF
VCBO
Collector-base voltage
Open emitter
V
VCEO
Collector-emitter voltage
Open base
V
VEBO
IC
ICM
IB
Emitter-base voltage
Collector current
Open collector
V
A
A
A
A
W
ꢀ
6
Collector current-peak
Base current
12
3
IBM
Ptot
Tj
Base current-peak
Total power dissipation
Junction temperature
Storage temperature
6
TC=25ꢀ
33
150
-65~150
Tstg
ꢀ
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BUT18F BUT18AF
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
400
450
TYP.
MAX
UNIT
BUT18F
Collector-emitter
sustaining voltage
VCEO(SUS)
IC=0.1A; IB=0;L=25mH
V
BUT18AF
VCEsat
Collector-emitter saturation voltage IC=4A; IB=0.8A
1.5
1.3
V
V
VBEsat
Base-emitter saturation voltage
IC=4A; IB=0.8A
VCE=850V ;VBE=0
Tj=125ꢀ
1.0
2.0
BUT18F
Collector
cut-off current
ICES
mA
mA
VCE=1000V ;VBE=0
1.0
2.0
BUT18AF
Tj=125ꢀ
IEBO
hFE-1
hFE-2
Emitter cut-off current
DC current gain
VEB=9V; IC=0
10
35
35
IC=10mA ; VCE=5V
IC=1A ; VCE=5V
10
10
DC current gain
Switching times resistive load
ton
Turn-on time
Storage time
Fall time
1.0
4.0
0.8
µs
µs
µs
IC=4A; IB1=-IB2=0.8A
VCC=250V
ts
tf
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BUT18F BUT18AF
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
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