BUV23 [SAVANTIC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | BUV23 |
| 厂家： | 
Savantic, Inc. |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：119K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BUV23
DESCRIPTION
·With TO-3 package
·High DC current gain
·Very fast switching times
·Low collector saturation voltage
APPLICATIONS
·Designed for high current,high speed
and high power application.
PINNING(see fig.2)
PIN
1
DESCRIPTION
Base
2
Emitter
Fig.1 simplified outline (TO-3) and symbol
3
Collector
Absolute maximum ratings (Tc=25ꢀ )
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
VALUE
400
UNIT
V
Open emitter
Open base
325
V
Open collector
7
V
30
A
ICM
Collector current-peak
Base current
40
A
IB
6
A
PT
Total power dissipation
Junction temperature
Storage temperature
TC=25ꢀ
250
W
ꢀ
Tj
-65~200
-65~200
Tstg
ꢀ
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-C
Thermal resistance junction to case
0.7
ꢀ/W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BUV23
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
VCEO(SUS)
V(BR)EBO
VCEsat-1
VCEsat-2
VBEsat
ICEX
PARAMETER
CONDITIONS
MIN
325
7
TYP.
MAX
UNIT
Collector-emitter sustaining voltage IC=0.2A; IB=0;L=25mH
V
V
Emitter-base breakdown voltage
IE=50mA; IC=0
Collector-emitter saturation voltage IC=8 A;IB=1.6A
Collector-emitter saturation voltage IC=16 A;IB=3.2 A
0.8
1.0
1.5
V
V
Base-emitter saturation voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
IC=16 A;IB=3.2 A
V
VCE=400V;VBE=-1.5V
TC=125ꢀ
3.0
12
mA
mA
mA
ICEO
VCE=260V;IB=0
3
IEBO
VEB=5V; IC=0
1.0
60
hFE-1
IC=8A ; VCE=4V
15
8
hFE-2
DC current gain
IC=16A ; VCE=4V
IC=2A ; VCE=15V; f=4MHz
fT
Transition frequency
8.0
MHz
Switching times
ton
Turn-on time
0.8
2.5
0.4
µs
µs
µs
IC=16A ;IB1=-IB2=3.2A
VCC=100V ;RC=6.25Ω
ts
Storage time
Fall time
tf
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BUV23
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
相关型号：
©2020 ICPDF网 联系我们和版权申明