BUV47 [SAVANTIC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | BUV47 |
| 厂家： | 
Savantic, Inc. |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：138K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BUV47 BUV47B
DESCRIPTION
·With TO-3PN package.
·High voltage.
·Very high switching speed.
APPLICATIONS
·Suited for 220V switchmode power supply,
DC and AC motor control.
PINNING
PIN
1
DESCRIPTION
Base
Collector;connected to
mounting base
2
Fig.1 simplified outline (TO-3PN) and symbol
3
Emitter
Absolute maximum ratings (Ta=25ꢀ )
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
VALUE
UNIT
V
Open emitter
Open base
850
400
V
Open collector
7
V
9
15
A
ICM
Collector current-peak
Base current
A
IB
3
A
PC
Collector power dissipation
Junction temperature
Storage temperature
TC=25ꢀ
90
W
ꢀ
Tj
-65~150
-65~150
Tstg
ꢀ
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Thermal resistance junction case
1.38
ꢀ/W
Rth j-case
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BUV47 BUV47B
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
V(BR)EBO
PARAMETER
CONDITIONS
IE=10mA; IC=0
MIN
10
TYP.
MAX
UNIT
V
Emitter-base breakdown voltage
VCEO(SUS)
Collector-emitter sustaining voltage IC=0.2A; IB=0;L=25mH
400
V
BUV47
BUV47B IC=6A; IB=1.2A
BUV47 IC=8A; IB=2.5A
BUV47B IC=9A; IB=3A
BUV47 IC=5A; IB=1A
BUV47B IC=6A; IB=1.2A
VCE=850V ;VBE=-2.5V
IC=5A; IB=1A
Collector-emitter
saturation voltage
VCEsat-1
VCEsat-2
VBEsat
1.5
3.0
1.6
V
V
V
Collector-emitter
saturation voltage
Base-emitter
saturation voltage
ICEX
IEBO
hFE
Collector cut-off current
Emitter cut-off current
DC current gain
0.15
1.0
14
mA
mA
VEB=5V; IC=0
IC=10A ; VCE=5V
7
10
Switching times :
ton Turn-on time
ts
1.0
3.0
0.8
µs
µs
µs
IC=5A IB1=- IB2=1.0A
VCC=150V
Storage time
Fall time
tf
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BUV47 BUV47B
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
3
相关型号：
BUV47ALEADFREE
Power Bipolar Transistor, 9A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, TO-218, Plastic/Epoxy, 3 Pin
CENTRAL
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