BUY69A [SAVANTIC]

Silicon NPN Power Transistors; 硅NPN功率晶体管
BUY69A
型号: BUY69A
厂家: Savantic, Inc.    Savantic, Inc.
描述:

Silicon NPN Power Transistors
硅NPN功率晶体管

晶体 晶体管
文件: 总3页 (文件大小:112K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SavantIC Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
BUY69A BUY69B BUY69C  
DESCRIPTION  
·
With TO-3 package  
·High voltage capability  
APPLICATIONS  
·For horizontal deflection output stage  
of CTV receivers and high voltalge,  
fast switching and industrial applications  
PINNING (See Fig.2)  
PIN  
1
DESCRIPTION  
Base  
2
Emitter  
Fig.1 simplified outline (TO-3) and symbol  
3
Collector  
Absolute maximum ratings(Ta=25)  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
1000  
800  
500  
400  
325  
200  
8
UNIT  
BUY69A  
BUY69B  
BUY69C  
BUY69A  
BUY69B  
BUY69C  
VCBO  
Collector-base voltage  
Open emitter  
V
Collector-emitter  
sustaining voltage  
VCEO(SUS)  
Open base  
V
VEBO  
IC  
ICM  
IB  
Emitter-base voltage  
Collector current  
Open collector  
V
A
A
A
W
10  
Collector current-peak  
Base current  
15  
3.0  
PD  
Tj  
Total power dissipation  
Junction temperature  
Storage temperature  
TC=25ꢀ  
100  
200  
-65~200  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
MAX  
UNIT  
Rth j-c  
Thermal resistance from junction to case  
1.75  
/W  
SavantIC Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
BUY69A BUY69B BUY69C  
CHARACTERISTICS  
Tj=25ꢀ unless otherwise specified  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN  
400  
325  
200  
1000  
800  
500  
TYP.  
MAX  
UNIT  
BUY69A  
BUY69B  
BUY69C  
BUY69A  
BUY69B  
BUY69C  
Collector-emitter  
sustaining voltage  
VCEO(SUS)  
IC=100mA ; IB=0  
V
VCBO  
Collector-base voltage  
IC=1mA; IE=0  
V
VCEsat  
VBEsat  
ICES  
IEBO  
hFE  
Collector-emitter saturation voltage IC=8A ;IB=2.5A  
3.3  
2.2  
1.0  
1.0  
V
Base-emitter saturation voltage  
Collector cut-off current  
Emitter cut-off current  
DC current gain  
IC=8A ;IB=2.5A  
V
VCE=rated VCES; VBE=0  
VEB=8V; IC=0  
mA  
mA  
IC=2.5A ; VCE=10V  
IC=0.5A ; VCE=10V;f=1MHz  
15  
10  
fT  
Transition frequency  
MHz  
Switching times  
tr  
ts  
tf  
Rise time  
0.3  
1.8  
1.0  
µs  
µs  
µs  
IC=5A ;IB1=-IB2=1.0A; VCC=250V  
Storage time  
Fall time  
2
SavantIC Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
BUY69A BUY69B BUY69C  
PACKAGE OUTLINE  
Fig.2 Outline dimensions  
3

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