概述
数据手册MJ10012 概述
Silicon NPN Power Transistors 硅NPN功率晶体管
MJ10012 数据手册
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Product Specification
Silicon NPN Power Transistors
MJ10012
DESCRIPTION
·With TO-3 package
·High voltage,high current
·DARLINGTON
APPLICATIONS
·Automotive ignition
·Switching regulator
·Motor control applications
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
Fig.1 simplified outline (TO-3) and symbol
3
Collector
ABSOLUTE MAXIMUM RATINGS(TC=25ꢀ )
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
Open emitter
VALUE
600
400
8
UNIT
V
Open base
V
Open collector
V
10
A
ICM
Collector current-peak
Base current
15
A
IB
2
A
PC
Collector power dissipation
Junction temperature
Storage temperature
TC=25ꢀ
175
200
-65~200
W
ꢀ
Tj
ꢀ
Tstg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
Thermal resistance from junction to case
1.0
ꢀ/W
Rth j-C
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
MJ10012
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
VCEO(SUS)
VCE
PARAMETER
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
CONDITIONS
MIN
TYP.
MAX
UNIT
V
IC=0.2A ;IB=0
400
IC=3A; IB=0.6A
IC=6A; IB=0.6A
IC=10A; IB=2A
IC=6A; IB=0.6A
IC=10A; IB=2A
IC=10A ; VCE=6V
VCB=600V; IE=0
VCE=400V; IB=0
VEB=6V; IC=0
1.5
2.0
2.5
2.5
3.0
2.8
1
V
-1
-2
-3
-1
-2
(sat)
(sat)
(sat)
(sat)
(sat)
V
VCE
VCE
VBE
VBE
V
V
V
VBE
V
ICBO
ICEO
IEBO
hFE-1
hFE-2
hFE-3
VF
mA
mA
mA
1
40
DC current gain
IC=3A ; VCE=6V
IC=6A ; VCE=6V
IC=10A ; VCE=6V
IF=10A
300
100
20
DC current gain
2000
DC current gain
Diode forward voltage
3.5
15
15
V
ts
Storage time
µs
µs
IC=6.0A ; VCC=12V
IB1=IB2=0.3A
tf
Fall time
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
MJ10012
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
MJ10012 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| MJ10012-BP | MCC | Power Bipolar Transistor, 10A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 3 PIN | 获取价格 |
|
| MJ10012G | ONSEMI | 10A, 400V, NPN, Si, POWER TRANSISTOR, TO-204AA, GREEN, TO-3, 2 PIN | 获取价格 |
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| MJ10012LEADFREE | CENTRAL | 暂无描述 | 获取价格 |
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| MJ10013 | MOSPEC | POWER TRANSISTORS(10A,550-600V,175W) | 获取价格 |
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| MJ10014 | MOSPEC | POWER TRANSISTORS(10A,550-600V,175W) | 获取价格 |
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| MJ10015 | MOSPEC | POWER TRANSISTORS(50A,400-500V,250W) | 获取价格 |
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| MJ10015 | MOTOROLA | 50 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 AND 500 VOLTS 250 WATTS | 获取价格 |
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| MJ10015 | ONSEMI | NPN SILICON POWER DARLINGTON TRANSISTORS | 获取价格 |
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| MJ10015 | NJSEMI | Trans Darlington NPN 400V 50A 3-Pin(2+Tab) TO-3 | 获取价格 |
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| MJ10016 | MOTOROLA | 50 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 AND 500 VOLTS 250 WATTS | 获取价格 |
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