MJ802 [SAVANTIC]

Silicon NPN Power Transistors; 硅NPN功率晶体管


型号：	MJ802
厂家：	Savantic, Inc.
描述：	Silicon NPN Power Transistors 硅NPN功率晶体管晶体晶体管开关局域网
文件：	总3页 (文件大小：111K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SavantIC Semiconductor

Product Specification

Silicon NPN Power Transistors

MJ802

DESCRIPTION

·With TO-3 package

·Complement to type MJ4502

·Excellent safe operating area

APPLICATIONS

·For use as an output device in

complementary audio amplifiers

to 100-Watts music power per

channel

PINNING(see Fig.2)

DESCRIPTION

Base

Emitter

Collector

Fig.1 simplified outline (TO-3) and symbol

ABSOLUTE MAXIMUM RATINGS(T_C=25ꢀ )

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

VALUE

100

UNIT

Open emitter

Open base

Open collector

I_B

Base current

7.5

P_C

Collector power dissipation

Junction temperature

Storage temperature

T_C=25ꢀ

200

150

-65~200

ꢀ

T_j

ꢀ

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Thermal resistance junction to case

0.875

ꢀ/W

R_{th j-c}

SavantIC Semiconductor

Product Specification

Silicon NPN Power Transistors

MJ802

CHARACTERISTICS

Tj=25ꢀ unless otherwise specified

SYMBOL

PARAMETER

Collector-emitter sustaining voltage

Collector-emitter saturation voltage

Base-emitter saturation voltage

Base-emitter on voltage

Collector cut-off current

Emitter cut-off current

CONDITIONS

MIN

TYP.

MAX

UNIT

V_CEO(SUS)

I_C=0.2A ;I_B=0

I_C=7.5A; I_B=0.75A

I_C=7.5A ; V_CE=2V

0.8

1.3

V_CE

V_BE

(sat)

V_BE

V_CB=100V; I_E=0

T_C=150ꢀ

1.0

5.0

I_CBO

I_EBO

h_FE

f_T

V_EB=4V; I_C=0

1.0

DC current gain

I_C=7.5A ; V_CE=2V

100

Transition frequency

I_C=1A ; V_CE=10V;f=1.0MHz

2.0

MHz

SavantIC Semiconductor

Product Specification

Silicon NPN Power Transistors

MJ802

PACKAGE OUTLINE

Fig.2 outline dimensions (unindicated tolerance:±0.1mm)

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