MJE12007 [SAVANTIC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | MJE12007 |
| 厂家： | 
Savantic, Inc. |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：90K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
MJE12007
DESCRIPTION
·With TO-220 package
·High voltage
·Low saturation voltage
APPLICATIONS
Suited for line-operated switchmode
applications such as:
·Fluorescent lamp ballasts
·Inverters
·Solenoid and relay drivers
·Motor controls
·Deflection circuits
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
Emitter
3
ABSOLUTE MAXIMUM RATINGS(TC=25ꢀ )
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current-Peak
Total power dissipation
Junction temperature
Storage temperature
CONDITIONS
VALUE
1500
750
9
UNIT
Open emitter
Open base
V
V
V
A
A
W
ꢀ
Open collector
2.5
ICM
5
PD
TC=25ꢀ
80
150
-65~150
Tj
ꢀ
Tstg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Thermal resistance junction to case
1.56
ꢀ/W
Rth j-C
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
MJE12007
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
VCEO(SUS)
VCE
PARAMETER
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
CONDITIONS
MIN
TYP.
MAX
UNIT
V
IC=50mA; IB=0
750
IC=1A ;IB=0.5A
IC=2A ;IB=1A
IC=1A ;IB=0.5A
IC=2A ;IB=1A
1.0
2.5
1.5
2.8
V
-1
-2
-1
-2
(sat)
(sat)
(sat)
(sat)
V
VCE
VBE
VBE
V
V
VCEV=RatedValue; VBE(off)=-1.5V
TC=100ꢀ
0.25
2.5
ICEV
mA
mA
IEBO
hFE-1
hFE-2
Emitter cut-off current
VEB=9V; IC=0
0.25
DC current gain
IC=1A ; VCE=5V
IC=2A ; VCE=5V
3
DC current gain
2.5
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
MJE12007
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10mm)
3
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