MJE12007 [SAVANTIC]

Silicon NPN Power Transistors; 硅NPN功率晶体管
MJE12007
型号: MJE12007
厂家: Savantic, Inc.    Savantic, Inc.
描述:

Silicon NPN Power Transistors
硅NPN功率晶体管

晶体 晶体管
文件: 总3页 (文件大小:90K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SavantIC Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
MJE12007  
DESCRIPTION  
·With TO-220 package  
·High voltage  
·Low saturation voltage  
APPLICATIONS  
Suited for line-operated switchmode  
applications such as:  
·Fluorescent lamp ballasts  
·Inverters  
·Solenoid and relay drivers  
·Motor controls  
·Deflection circuits  
PINNING  
PIN  
DESCRIPTION  
1
Base  
2
Collector  
Emitter  
3
ABSOLUTE MAXIMUM RATINGS(TC=25ꢀ )  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current (DC)  
Collector current-Peak  
Total power dissipation  
Junction temperature  
Storage temperature  
CONDITIONS  
VALUE  
1500  
750  
9
UNIT  
Open emitter  
Open base  
V
V
V
A
A
W
Open collector  
2.5  
ICM  
5
PD  
TC=25ꢀ  
80  
150  
-65~150  
Tj  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
MAX  
UNIT  
Thermal resistance junction to case  
1.56  
/W  
Rth j-C  
SavantIC Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
MJE12007  
CHARACTERISTICS  
Tj=25ꢀ unless otherwise specified  
SYMBOL  
VCEO(SUS)  
VCE  
PARAMETER  
Collector-emitter sustaining voltage  
Collector-emitter saturation voltage  
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
Base-emitter saturation voltage  
Collector cut-off current  
CONDITIONS  
MIN  
TYP.  
MAX  
UNIT  
V
IC=50mA; IB=0  
750  
IC=1A ;IB=0.5A  
IC=2A ;IB=1A  
IC=1A ;IB=0.5A  
IC=2A ;IB=1A  
1.0  
2.5  
1.5  
2.8  
V
-1  
-2  
-1  
-2  
(sat)  
(sat)  
(sat)  
(sat)  
V
VCE  
VBE  
VBE  
V
V
VCEV=RatedValue; VBE(off)=-1.5V  
TC=100ꢀ  
0.25  
2.5  
ICEV  
mA  
mA  
IEBO  
hFE-1  
hFE-2  
Emitter cut-off current  
VEB=9V; IC=0  
0.25  
DC current gain  
IC=1A ; VCE=5V  
IC=2A ; VCE=5V  
3
DC current gain  
2.5  
2
SavantIC Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
MJE12007  
PACKAGE OUTLINE  
Fig.2 Outline dimensions (unindicated tolerance:±0.10mm)  
3

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