MJF18006 [SAVANTIC]
Silicon NPN Power Transistors; 硅NPN功率晶体管![MJF18006](http://pdffile.icpdf.com/pdf1/p00180/img/icpdf/MJF18_1010390_icpdf.jpg)
型号: | MJF18006 |
厂家: | ![]() |
描述: | Silicon NPN Power Transistors |
文件: | 总3页 (文件大小:216K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
MJF18006
DESCRIPTION
·
·With TO-220F package
·High voltage ,high speed
APPLICATIONS
·Designed for use in 220V line-operated
switchmode power supplies and electronic
light ballasts
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
Emitter
Fig.1 simplified outline (TO-220F) and symbol
3
ABSOLUTE MAXIMUM RATINGS(TC=25ꢀ )
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current-Peak
Base current
CONDITIONS
Open emitter
VALUE
UNIT
V
1000
Open base
450
V
Open collector
9
V
6
A
ICM
15
A
IB
4
8
A
IBM
Base current-Peak
A
PD
Total power dissipation
Junction temperature
Storage temperature
TC=25ꢀ
40
W
ꢀ
150
-65~150
Tj
ꢀ
Tstg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Thermal resistance junction to case
Thermal resistance junction to ambient
MAX
3.12
62.5
UNIT
ꢀ/W
ꢀ/W
Rth j-C
Rth j-A
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
MJF18006
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
VCEO(SUS)
VCE
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
Collector-emitter sustaining voltage IC=0.1A; L=25mH
450
V
V
V
V
V
IC=1.5A ;IB=0.15A
Collector-emitter saturation voltage
TC=125ꢀ
0.6
0.65
-1
-2
-1
-2
(sat)
(sat)
(sat)
(sat)
IC=3A ;IB=0.6A
Collector-emitter saturation voltage
TC=125ꢀ
0.7
0.8
VCE
VBE
VBE
Base-emitter saturation voltage
Base-emitter saturation voltage
IC=1.5A; IB=0.15A
IC=3A; IB=0.6A
1.2
1.3
0.1
0.5
0.1
0.1
0.1
34
VCES=RatedVCES;
VEB=0
ICES
Collector cut-off current
mA
TC=125ꢀ
VCES=800V
ICEO
IEBO
hFE-1
hFE-2
hFE-3
hFE-4
fT
Collector cut-off current
Emitter cut-off current
DC current gain
VCE=RatedVCEO; IB=0
VEB=9V; IC=0
mA
mA
IC=0.5A ; VCE=5V
14
6
DC current gain
IC=3A ; VCE=1V
DC current gain
IC=1.5A ; VCE=1V
11
10
DC current gain
IC=10mA ; VCE=5V
IC=0.5A ; VCE=10V;f=1.0MHz
IE=0 ; VCB=10V;f=1.0MHz
Transition frequency
Collector outoput capacitance
14
75
MHz
pF
COB
Switching times resistive load,Duty Cycle≤10%,Pulse Width=20µs
Turn-on time
Turn-off time
Turn-on time
Turn-off time
90
1.7
0.2
1.2
180
2.5
0.3
2.5
ns
µs
µs
µs
ton
toff
ton
toff
VCC=300V ,IC=3A
IB1=0.6A; IB2=1.5A
VCC=300V ,IC=1.3A
IB1=0.13A; IB2=0.65A
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
MJF18006
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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