S2055F [SAVANTIC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | S2055F |
| 厂家： | 
Savantic, Inc. |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：238K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
S2055F
DESCRIPTION
·With TO-3P(H)IS package
·High voltage ,high speed
·Low collector saturation voltage
·Built-in damper diode
APPLICATIONS
·Color TV horizontal output applications
·Color TV switching regulator applications
PINNING
PIN
DESCRIPTION
1
Base
Collector;connected to
mounting base
2
Fig.1 simplified outline (TO-3P(H)IS) and symbol
3
Emitter
ABSOLUTE MAXIMUM RATINGS (TC=25ꢀ )
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
VALUE
1500
700
5
UNIT
V
Open emitter
Open base
V
Open collector
V
8
A
ICM
Collector current-peak
Base current
15
A
IB
4
A
PC
Collector power dissipation
Junction temperature
Storage temperature
TC=25ꢀ
125
150
-55~150
W
ꢀ
Tj
ꢀ
Tstg
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
S2055F
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX UNIT
VCEO(SUS)
Collector-emitter sustaining voltage IB=100mA ; IB=0
Collector-emitter saturation voltage IC=4.5A ;IB=1.0A
700
V
5.0
1.2
1
V
V
VCE
VBE
(sat)
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
IC=4.5A ;IB=1.0A
VCB=1500V; VBE=0
VEB=5V; IC=0
(sat)
ICBO
mA
mA
IEBO
hFE-1
hFE-2
COB
fT
300
30
9
IC=1A ; VCE=5V
10
DC current gain
IC=4.5A ; VCE=5V
IE=0 ; VCB=10V;f=1MHz
IC=0.1A ; VCE=10V
4.5
Collector output capacitance
Transition frequency
95
2
pF
MHz
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
S2055F
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
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