TIP106 [SAVANTIC]
Silicon PNP Darlington Power Transistors; 硅PNP达林顿功率晶体管![TIP106](http://pdffile.icpdf.com/pdf1/p00161/img/icpdf/TIP10_893531_icpdf.jpg)
型号: | TIP106 |
厂家: | ![]() |
描述: | Silicon PNP Darlington Power Transistors |
文件: | 总3页 (文件大小:94K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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SavantIC Semiconductor
Product Specification
Silicon PNP Darlington Power Transistors
TIP105/106/107
DESCRIPTION
·With TO-220C package
·DARLINGTON
·High DC current gain
·Low collector saturation voltage
·Complement to type TIP100/101/102
APPLICATIONS
·For industrial use
PINNING
PIN
DESCRIPTION
1
Base
Collector;connected to
mounting base
2
3
Emitter
ABSOLUTE MAXIMUM RATINGS(Tc=25ꢀ )
SYMBOL
PARAMETER
CONDITIONS
VALUE
-60
UNIT
TIP105
TIP106
TIP107
TIP105
TIP106
TIP107
VCBO
Collector-base voltage
Open emitter
V
-80
-100
-60
VCEO
Collector-emitter voltage
Open base
V
-80
-100
-5
VEBO
IC
ICM
IB
Emitter-base voltage
Collector current-DC
Collector current-peak
Base current-DC
Open collector
V
A
A
A
-8
-15
-1
TC=25ꢀ
Ta=25ꢀ
80
PC
Collector power dissipation
W
2
Junction temperature
Storage temperature
150
-65~150
ꢀ
ꢀ
Tj
Tstg
SavantIC Semiconductor
Product Specification
Silicon PNP Darlington Power Transistors
TIP105/106/107
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
VCEO(SUS)
VCE
PARAMETER
CONDITIONS
MIN
-60
TYP.
MAX
UNIT
TIP105
TIP106
TIP107
Collector-emitter
sustaining voltage
IC=-30mA, IB=0
V
-80
-100
Collector-emitter saturation voltage IC=-3A ,IB=-6mA
Collector-emitter saturation voltage IC=-8A ,IB=-80mA
-2.0
-2.5
-2.8
V
V
V
-1
(sat)
VCE
-2
(sat)
VBE
Base-emitter on voltage
IC=-8A ; VCE=-4V
VCB=-60V, IE=0
TIP105
TIP106
TIP107
TIP105
TIP106
TIP107
ICBO
Collector cut-off current
-50
-50
µA
VCB=-80V, IE=0
VCB=-100V, IE=0
VCE=-30V, IB=0
ICEO
Collector cut-off current
µA
VCE=-40V, IB=0
VCE=-50V, IB=0
IEBO
hFE-1
hFE-2
COB
Emitter cut-off current
DC current gain
VEB=-5V; IC=0
-2
mA
IC=-3A ; VCE=-4V
IC=-8A ; VCE=-4V
IE=0 ; VCB=-10V,f=0.1MHz
1000
200
20000
DC current gain
Output capacitance
300
pF
2
SavantIC Semiconductor
Product Specification
Silicon PNP Darlington Power Transistors
TIP105/106/107
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.1mm)
3
相关型号:
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TIP106-BP
Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT, PLASTIC, TO-220, 3 PIN
MCC
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TIP10616
Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
MOTOROLA
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TIP106A
Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
MOTOROLA
![](http://pdffile.icpdf.com/pdf2/p00247/img/page/TIP48WD_1499891_files/TIP48WD_1499891_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00247/img/page/TIP48WD_1499891_files/TIP48WD_1499891_2.jpg)
TIP106AF
Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
MOTOROLA
![](http://pdffile.icpdf.com/pdf2/p00247/img/page/TIP48WD_1499891_files/TIP48WD_1499891_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00247/img/page/TIP48WD_1499891_files/TIP48WD_1499891_2.jpg)
TIP106C
Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
MOTOROLA
![](http://pdffile.icpdf.com/pdf2/p00291/img/page/TIP106J69Z_1766447_files/TIP106J69Z_1766447_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00291/img/page/TIP106J69Z_1766447_files/TIP106J69Z_1766447_2.jpg)
TIP106J69Z
Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
FAIRCHILD
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![](http://pdffile.icpdf.com/pdf2/p00247/img/page/TIP48WD_1499891_files/TIP48WD_1499891_2.jpg)
TIP106L
Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
MOTOROLA
![](http://pdffile.icpdf.com/pdf2/p00247/img/page/TIP48WD_1499891_files/TIP48WD_1499891_1.jpg)
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TIP106N
Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
MOTOROLA
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