TIP107 [SAVANTIC]
Silicon PNP Darlington Power Transistors; 硅PNP达林顿功率晶体管
| 型号： | TIP107 |
| 厂家： | 
Savantic, Inc. |
| 描述： | Silicon PNP Darlington Power Transistors |
| 文件： | 总3页 (文件大小：94K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SavantIC Semiconductor
Product Specification
Silicon PNP Darlington Power Transistors
TIP105/106/107
DESCRIPTION
·With TO-220C package
·DARLINGTON
·High DC current gain
·Low collector saturation voltage
·Complement to type TIP100/101/102
APPLICATIONS
·For industrial use
PINNING
PIN
DESCRIPTION
1
Base
Collector;connected to
mounting base
2
3
Emitter
ABSOLUTE MAXIMUM RATINGS(Tc=25ꢀ )
SYMBOL
PARAMETER
CONDITIONS
VALUE
-60
UNIT
TIP105
TIP106
TIP107
TIP105
TIP106
TIP107
VCBO
Collector-base voltage
Open emitter
V
-80
-100
-60
VCEO
Collector-emitter voltage
Open base
V
-80
-100
-5
VEBO
IC
ICM
IB
Emitter-base voltage
Collector current-DC
Collector current-peak
Base current-DC
Open collector
V
A
A
A
-8
-15
-1
TC=25ꢀ
Ta=25ꢀ
80
PC
Collector power dissipation
W
2
Junction temperature
Storage temperature
150
-65~150
ꢀ
ꢀ
Tj
Tstg
SavantIC Semiconductor
Product Specification
Silicon PNP Darlington Power Transistors
TIP105/106/107
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
VCEO(SUS)
VCE
PARAMETER
CONDITIONS
MIN
-60
TYP.
MAX
UNIT
TIP105
TIP106
TIP107
Collector-emitter
sustaining voltage
IC=-30mA, IB=0
V
-80
-100
Collector-emitter saturation voltage IC=-3A ,IB=-6mA
Collector-emitter saturation voltage IC=-8A ,IB=-80mA
-2.0
-2.5
-2.8
V
V
V
-1
(sat)
VCE
-2
(sat)
VBE
Base-emitter on voltage
IC=-8A ; VCE=-4V
VCB=-60V, IE=0
TIP105
TIP106
TIP107
TIP105
TIP106
TIP107
ICBO
Collector cut-off current
-50
-50
µA
VCB=-80V, IE=0
VCB=-100V, IE=0
VCE=-30V, IB=0
ICEO
Collector cut-off current
µA
VCE=-40V, IB=0
VCE=-50V, IB=0
IEBO
hFE-1
hFE-2
COB
Emitter cut-off current
DC current gain
VEB=-5V; IC=0
-2
mA
IC=-3A ; VCE=-4V
IC=-8A ; VCE=-4V
IE=0 ; VCB=-10V,f=0.1MHz
1000
200
20000
DC current gain
Output capacitance
300
pF
2
SavantIC Semiconductor
Product Specification
Silicon PNP Darlington Power Transistors
TIP105/106/107
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.1mm)
3
相关型号：
TIP107C
Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
MOTOROLA
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