TIP126 [SAVANTIC]

Silicon PNP Darlington Power Transistors; 硅PNP达林顿功率晶体管
TIP126
型号: TIP126
厂家: Savantic, Inc.    Savantic, Inc.
描述:

Silicon PNP Darlington Power Transistors
硅PNP达林顿功率晶体管

晶体 晶体管
文件: 总4页 (文件大小:132K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SavantIC Semiconductor  
Product Specification  
Silicon PNP Darlington Power Transistors  
TIP125/126/127  
DESCRIPTION  
·With TO-220C package  
·DARLNGTON  
·High DC current gain  
·Low collector saturation voltage  
·Complement to type TIP120/121/122  
APPLICATIONS  
·Designed for general–purpose amplifier  
and low–speed switching applications  
PINNING  
PIN  
DESCRIPTION  
1
Base  
Collector;connected to  
mounting base  
2
3
Emitter  
ABSOLUTE MAXIMUM RATINGS(Tc=25ꢀ )  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
-60  
UNIT  
TIP125  
TIP126  
TIP127  
TIP125  
TIP126  
TIP127  
VCBO  
Collector-base voltage  
Open emitter  
V
-80  
-100  
-60  
VCEO  
Collector-emitter voltage  
Open base  
V
-80  
-100  
-5  
VEBO  
IC  
ICM  
IB  
Emitter-base voltage  
Collector current-DC  
Collector current-Pulse  
Base current-DC  
Open collector  
V
A
-5  
-8  
A
-120  
65  
mA  
TC=25ꢀ  
Ta=25ꢀ  
PC  
Collector power dissipation  
W
2
Tj  
Junction temperature  
Storage temperature  
150  
-65~150  
Tstg  
SavantIC Semiconductor  
Product Specification  
Silicon PNP Darlington Power Transistors  
TIP125/126/127  
CHARACTERISTICS  
Tj=25ꢀ unless otherwise specified  
SYMBOL  
VCEO(SUS)  
VCE  
PARAMETER  
CONDITIONS  
MIN  
-60  
TYP.  
MAX  
UNIT  
TIP125  
TIP126  
TIP127  
Collector-emitter  
sustaining voltage  
IC=-0.1A, IB=0  
V
-80  
-100  
Collector-emitter saturation voltage IC=-3A ,IB=-12mA  
Collector-emitter saturation voltage IC=-5A ,IB=-20mA  
-2.0  
-4.0  
-2.5  
V
V
V
-1  
(sat)  
VCE  
-2  
(sat)  
VBE  
Base-emitter on voltage  
IC=-3.0A ; VCE=-3V  
VCB=-60V, IE=0  
TIP125  
TIP126  
TIP127  
TIP125  
TIP126  
TIP127  
Collector  
ICBO  
-0.2  
mA  
VCB=-80V, IE=0  
cut-off current  
VCB=-100V, IE=0  
VCE=-30V, IB=0  
Collector  
ICEO  
-0.5  
-2  
mA  
mA  
VCE=-40V, IB=0  
cut-off current  
VCE=-50V, IB=0  
IEBO  
hFE-1  
hFE-2  
COB  
Emitter cut-off current  
DC current gain  
VEB=-5V; IC=0  
IC=-0.5A ; VCE=-3V  
IC=-3.0A ; VCE=-3V  
IE=0 ; VCB=-10V,f=0.1MHz  
1000  
1000  
DC current gain  
Output capacitance  
300  
pF  
2
SavantIC Semiconductor  
Product Specification  
Silicon PNP Darlington Power Transistors  
TIP125/126/127  
PACKAGE OUTLINE  
Fig.2 Outline dimensions  
3
SavantIC Semiconductor  
Product Specification  
Silicon PNP Darlington Power Transistors  
TIP125/126/127  
4

相关型号:

TIP126(TO-220)

Transistor
JCST

TIP126-6203

Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
RENESAS

TIP126-6226

Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
RENESAS

TIP126-6255

8A, 80V, PNP, Si, POWER TRANSISTOR, TO-220AB
RENESAS

TIP126-6261

Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
RENESAS

TIP126-6263

Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
RENESAS

TIP126-6264

8A, 80V, PNP, Si, POWER TRANSISTOR, TO-220AB
RENESAS

TIP126-BP

Silicon PNP Darlington Power Transistors
MCC

TIP126-BP-HF

Power Bipolar Transistor,
MCC

TIP126-DR6269

8A, 80V, PNP, Si, POWER TRANSISTOR, TO-220AB
RENESAS

TIP126-DR6280

Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
RENESAS

TIP12616

5 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-220AB
MOTOROLA