TIP29 [SAVANTIC]

Silicon NPN Power Transistors; 硅NPN功率晶体管
TIP29
型号: TIP29
厂家: Savantic, Inc.    Savantic, Inc.
描述:

Silicon NPN Power Transistors
硅NPN功率晶体管

晶体 晶体管
文件: 总3页 (文件大小:92K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SavantIC Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
TIP29/29A/29B/29C  
DESCRIPTION  
·With TO-220C package  
·Complement to type TIP30/30A/30B/30C  
APPLICATIONS  
·For use in general purpose power amplifier  
and switching applications  
PINNING  
PIN  
DESCRIPTION  
1
Base  
Collector;connected to  
mounting base  
2
3
Emitter  
ABSOLUTE MAXIMUM RATINGS(Tc=25ꢀ )  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
UNIT  
TIP29  
40  
60  
TIP29A  
TIP29B  
TIP29C  
TIP29  
VCBO  
Collector-base voltage  
Open emitter  
V
V
80  
100  
40  
TIP29A  
TIP29B  
TIP29C  
60  
VCEO  
Collector-emitter voltage  
Open base  
80  
100  
5
VEBO  
IC  
ICM  
IB  
Emitter-base voltage  
Collector current (DC)  
Collector current-Pulse  
Base current  
Open collector  
V
A
A
A
w
1
3
0.4  
30  
PC  
Tj  
Collector power dissipation  
Junction temperature  
Storage temperature  
TC=25ꢀ  
-65~150  
-65~150  
Tstg  
SavantIC Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
TIP29/29A/29B/29C  
CHARACTERISTICS  
Tj=25ꢀ unless otherwise specified  
SYMBOL  
PARAMETER  
TIP29  
CONDITIONS  
MIN  
40  
TYP.  
MAX  
UNIT  
TIP29A  
TIP29B  
TIP29C  
60  
Collector-emitter  
sustaining voltage  
VCEO(SUS)  
IC=30mA; IB=0  
V
80  
100  
Collector-emitter saturation voltage IC=1A; IB=0.125A  
0.7  
1.3  
V
V
VCE  
(sat)  
VBE  
Base-emitter on voltage  
TIP29  
IC=1A ; VCE=4V  
VCE=40V; VEB=0  
VCE=60V; VEB=0  
VCE=80V; VEB=0  
TIP29A  
Collector  
ICES  
0.2  
mA  
cut-off current  
TIP29B  
TIP29C  
VCE=100V; VEB=0  
TIP29/29A  
TIP29B/29C  
VCE=30V; IB=0  
Collector  
cut-off current  
ICEO  
0.3  
1.0  
mA  
mA  
VCE=60V; IB=0  
IEBO  
hFE-1  
hFE-2  
fT  
Emitter cut-off current  
DC current gain  
VEB=5V; IC=0  
IC=0.2A ; VCE=4V  
IC=1A ; VCE=4V  
40  
15  
3
DC current gain  
75  
Transition frequency  
IC=0.2A ; VCE=10V;f=1MHz  
MHz  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
VALUE  
4.167  
UNIT  
/W  
Rth j-c  
Thermal resistance junction to case  
2
SavantIC Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
TIP29/29A/29B/29C  
PACKAGE OUTLINE  
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)  
3

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