TIP30C [SAVANTIC]

Silicon PNP Power Transistors; 硅PNP功率晶体管
TIP30C
型号: TIP30C
厂家: Savantic, Inc.    Savantic, Inc.
描述:

Silicon PNP Power Transistors
硅PNP功率晶体管

晶体 晶体管 局域网
文件: 总3页 (文件大小:104K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SavantIC Semiconductor  
Product Specification  
Silicon PNP Power Transistors  
TIP30/30A/30B/30C  
DESCRIPTION  
·With TO-220C package  
·Complement to type TIP29/29A/29B/29C  
APPLICATIONS  
·For use in general purpose power amplifer  
and switching applications  
PINNING  
PIN  
DESCRIPTION  
1
Emitter  
Collector;connected to  
mounting base  
2
3
Base  
ABSOLUTE MAXIMUM RATINGS(Tc=25ꢀ )  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
-40  
UNIT  
TIP30  
TIP30A  
TIP30B  
TIP30C  
TIP30  
-60  
VCBO  
Collector-base voltage  
Open emitter  
V
V
-80  
-100  
-40  
TIP30A  
TIP30B  
TIP30C  
-60  
VCEO  
Collector-emitter voltage  
Open base  
-80  
-100  
-5  
VEBO  
IC  
ICM  
IB  
Emitter-base voltage  
Collector current (DC)  
Collector current-Pulse  
Base current  
Open collector  
V
A
A
A
w
-1  
-3  
-0.4  
30  
PC  
Tj  
Collector power dissipation  
Junction temperature  
Storage temperature  
TC=25ꢀ  
150  
-65~150  
Tstg  
SavantIC Semiconductor  
Product Specification  
Silicon PNP Power Transistors  
TIP30/30A/30B/30C  
CHARACTERISTICS  
Tj=25ꢀ unless otherwise specified  
SYMBOL  
PARAMETER  
TIP30  
CONDITIONS  
MIN  
-40  
TYP.  
MAX  
UNIT  
TIP30A  
TIP30B  
TIP30C  
-60  
Collector-emitter  
sustaining voltage  
VCEO(SUS)  
IC=-30mA; IB=0  
V
-80  
-100  
Collector-emitter saturation voltage IC=-1A ;IB=-0.125A  
-0.7  
-1.3  
V
V
VCE  
(sat)  
VBE  
Base-emitter on voltage  
TIP30  
IC=-1A ; VCE=-4V  
VCE=-40V; VEB=0  
VCE=-60V; VEB=0  
VCE=-80V; VEB=0  
TIP30A  
Collector  
ICES  
-0.2  
mA  
cut-off current  
TIP30B  
TIP30C  
VCE=-100V; VEB=0  
TIP30/30A  
TIP30B/30C  
VCE=-30V; IB=0  
Collector  
cut-off current  
ICEO  
-0.3  
-1.0  
mA  
mA  
VCE=-60V; IB=0  
IEBO  
hFE-1  
hFE-2  
fT  
Emitter cut-off current  
DC current gain  
VEB=-5V; IC=0  
IC=-0.2A ; VCE=-4V  
IC=-1A ; VCE=-4V  
IC=-0.2A ; VCE=-10V;f=1MHz  
40  
15  
3
DC current gain  
75  
Transition frequency  
MHz  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
VALUE  
4.167  
UNIT  
/W  
Thermal resistance junction to case  
Rth j-c  
2
SavantIC Semiconductor  
Product Specification  
Silicon PNP Power Transistors  
TIP30/30A/30B/30C  
PACKAGE OUTLINE  
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)  
3

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