TIP30C [SAVANTIC]
Silicon PNP Power Transistors; 硅PNP功率晶体管型号: | TIP30C |
厂家: | Savantic, Inc. |
描述: | Silicon PNP Power Transistors |
文件: | 总3页 (文件大小:104K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
TIP30/30A/30B/30C
DESCRIPTION
·With TO-220C package
·Complement to type TIP29/29A/29B/29C
APPLICATIONS
·For use in general purpose power amplifer
and switching applications
PINNING
PIN
DESCRIPTION
1
Emitter
Collector;connected to
mounting base
2
3
Base
ABSOLUTE MAXIMUM RATINGS(Tc=25ꢀ )
SYMBOL
PARAMETER
CONDITIONS
VALUE
-40
UNIT
TIP30
TIP30A
TIP30B
TIP30C
TIP30
-60
VCBO
Collector-base voltage
Open emitter
V
V
-80
-100
-40
TIP30A
TIP30B
TIP30C
-60
VCEO
Collector-emitter voltage
Open base
-80
-100
-5
VEBO
IC
ICM
IB
Emitter-base voltage
Collector current (DC)
Collector current-Pulse
Base current
Open collector
V
A
A
A
w
ꢀ
-1
-3
-0.4
30
PC
Tj
Collector power dissipation
Junction temperature
Storage temperature
TC=25ꢀ
150
-65~150
ꢀ
Tstg
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
TIP30/30A/30B/30C
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
PARAMETER
TIP30
CONDITIONS
MIN
-40
TYP.
MAX
UNIT
TIP30A
TIP30B
TIP30C
-60
Collector-emitter
sustaining voltage
VCEO(SUS)
IC=-30mA; IB=0
V
-80
-100
Collector-emitter saturation voltage IC=-1A ;IB=-0.125A
-0.7
-1.3
V
V
VCE
(sat)
VBE
Base-emitter on voltage
TIP30
IC=-1A ; VCE=-4V
VCE=-40V; VEB=0
VCE=-60V; VEB=0
VCE=-80V; VEB=0
TIP30A
Collector
ICES
-0.2
mA
cut-off current
TIP30B
TIP30C
VCE=-100V; VEB=0
TIP30/30A
TIP30B/30C
VCE=-30V; IB=0
Collector
cut-off current
ICEO
-0.3
-1.0
mA
mA
VCE=-60V; IB=0
IEBO
hFE-1
hFE-2
fT
Emitter cut-off current
DC current gain
VEB=-5V; IC=0
IC=-0.2A ; VCE=-4V
IC=-1A ; VCE=-4V
IC=-0.2A ; VCE=-10V;f=1MHz
40
15
3
DC current gain
75
Transition frequency
MHz
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
4.167
UNIT
ꢀ/W
Thermal resistance junction to case
Rth j-c
2
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
TIP30/30A/30B/30C
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
相关型号:
TIP30C-6200
Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
RENESAS
TIP30C-6203
Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
RENESAS
TIP30C-6261
Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
RENESAS
TIP30C-6263
Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
RENESAS
TIP30C-6264
Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
RENESAS
TIP30C-DR6280
Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
RENESAS
TIP30C16A
Power Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
MOTOROLA
©2020 ICPDF网 联系我们和版权申明