TIP31A [SAVANTIC]
Silicon NPN Power Transistors; 硅NPN功率晶体管型号: | TIP31A |
厂家: | Savantic, Inc. |
描述: | Silicon NPN Power Transistors |
文件: | 总4页 (文件大小:117K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
TIP31/31A/31B/31C
DESCRIPTION
·With TO-220C package
·Complement to type TIP32/32A/32B/32C
APPLICATIONS
·Medium power linear switching
applications
PINNING
PIN
DESCRIPTION
1
Base
Collector;connected to
mounting base
2
3
Emitter
ABSOLUTE MAXIMUM RATINGS(TC=25ꢀ )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
TIP31
40
60
TIP31A
TIP31B
TIP31C
TIP31
VCBO
Collector-base voltage
Open emitter
V
V
80
100
40
TIP31A
TIP31B
TIP31C
60
VCEO
Collector-emitter voltage
Open base
80
100
5
VEBO
IC
ICM
IB
Emitter-base voltage
Collector current (DC)
Collector current-Pulse
Base current
Open collector
V
A
A
A
3
5
1
TC=25ꢀ
Ta=25ꢀ
40
PC
Collector power dissipation
w
2
Tj
Junction temperature
Storage temperature
150
-65~150
ꢀ
ꢀ
Tstg
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
TIP31/31A/31B/31C
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
PARAMETER
TIP31
CONDITIONS
MIN
40
TYP.
MAX
UNIT
TIP31A
TIP31B
TIP31C
60
Collector-emitter
sustaining voltage
VCEO(SUS)
IC=30mA; IB=0
V
80
100
Collector-emitter saturation voltage
Base-emitter on voltage
TIP31
IC=3A IB=0.375A
IC=3A ; VCE=4V
VCE=40V; VEB=0
VCE=60V; VEB=0
VCE=80V; VEB=0
VCE=100V; VEB=0
VCE=30V; IB=0
VCE=60V; IB=0
VEB=5V; IC=0
1.2
1.8
V
V
VCE
(sat)
VBE
TIP31A
Collector
ICES
0.2
mA
cut-off current
TIP31B
TIP31C
TIP31/31A
Collector
ICEO
0.3
1.0
mA
mA
cut-off current
TIP31B/31C
IEBO
hFE-1
hFE-2
fT
Emitter cut-off current
DC current gain
IC=1A ; VCE=4V
IC=3A ; VCE=4V
IC=0.5A ; VCE=10V
25
10
3
DC current gain
50
Transition frequency
MHz
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
TIP31/31A/31B/31C
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
TIP31/31A/31B/31C
4
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