SE3510 [SEAWARD]
1MHz, 3A, Boost PWM Converter with QC2.0 interface;
| 型号： | SE3510 |
| 厂家： | 
Seaward Electronics Inc. |
| 描述： | 1MHz, 3A, Boost PWM Converter with QC2.0 interface |
| 文件： | 总7页 (文件大小：415K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
General Description
Features
The SE3510 is a current mode boost DC-DC
converter with built-in handshake interface circuitry to
QC2.0 compatible cellphones and other similar
devices. If the interface is successful, SE3510 will
automatically increase the voltage to 9V and 1.5A to
provide fast charging. If the plugged device is not
QC2.0 compatible, SE3510 will provide up to 5V/2A
for fast charging.
Built-in D-/D+ interface with QC2.0 devices
Automatic Output Selection between 5V and 9V
Internal Fixed PWM frequency: 1.0MHz
Precision Feedback Reference Voltage:
1.275V@Vout=5V; 2.275V@Vout=9V (±2%)
Internal 40mΩ, 6A, 20V Power MOSFET
Shutdown Current: 0.1μA
Over Temperature Protection
SE3510 integrates an super efficient MOSFET with
Rds(ON) ~ 40mΩ. This makes power conversions
very efficient. The internal compensation network are
fined turned to provide the best compensation for
both 5V and 9V operations. This allows SE3510 to
use only 8 components to provide either 9V/1.5A or
5V/2A operations. The soft-start function is also
onboard..
Over Current Protection: 2.4A@Vout=5V;
1.8A@ Vout=9V
Package: SOP8
Application
Portable Chargers compatible with QC2.0
LCD Displays
Digital Cameras
Handheld Devices
Portable Products
The SE3510 is available in the SOP8 package and
provides space-saving PCB for the application fields.
Typical Application
Rev1.0
Preliminary and all contents are subject to change without prior notice.
© Seaward Electronics, Inc. • www.seawardinc.com.cn • Page 1
1/7/2013
Pin Configuration
Top View
SOP8
Pin Description
Number
Pin
VIN
EN
Pin Function Description
1
2
3
4
5
6
7
8
Input power supply pin
Shutdown control input, Connect this pin to logic high level to enable the device
DM
DP
USB D- Data Line Input
USB D+ Data Line Input
Switch pin
SW
CS
Current Sense PIN
Feedback pin
FB
GND
Power ground
Rev1.0
Preliminary and all contents are subject to change without prior notice.
© Seaward Electronics, Inc. • www.seawardinc.com.cn • Page 2
1/7/2013
Ordering Information
Marking
Package
Part Number
Remarks
Information
Starting with 5, a bar on top of 5 is for production year 2011, and
underlined 5 is for year 2012. The next character is marked on top for
2013, and underlined for 2014. The naming pattern continues with
consecutive characters for later years.
SE3510-HF
1535
SE3510-LF
SOP8
The character “x” is the week code. (A-Z: 1-26, a-z: 27-52)
The last character “L” is for lead-free process.
A dot on bottom left corner is Pin 1.
Functional Block Diagram
Rev1.0
Preliminary and all contents are subject to change without prior notice.
© Seaward Electronics, Inc. • www.seawardinc.com.cn • Page 3
1/7/2013
Absolute Maximum Ratings
Parameter
Supply Voltage VIN
Symbol
VIN
Maximum
6
Units
V
SW Voltage
VSW
20
V
EN, DM, DP, CS, FB Voltage
Power Dissipation
6
V
PD
θJA
TJ
455
mW
°C/W
°C
Thermal Resistance
+220
+150
-40 to +85
-65 to 150
+260
Junction Temperature
Operating Temperature
Storage Temperature
Lead Temperature (Soldering, 10 sec)
TOP
TST
°C
°C
°C
Recommended Operating Conditions
Parameter
Supply Voltage
Symbol
Min
2.8
Typ
Max
Unit
V
VIN
TA
5.5
Operating Temperature Range
-40
+85
℃
Electrical Characteristics
VIN = 3.3V, TA= 25℃; unless otherwise specified
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
System Supply Input
VIN
Input Supply Range
Under Voltage Lockout
UVLO Hysteresis
2.8
5.5
V
V
VUVLO
2.8
0.17
0.19
2
V
Iq
Iq
Iq
Quiescent Current
VFB=90% *Vref, No switching
VFB=110%*Vref, Switching
VEN=GND
mA
mA
μA
Average Supply Current
Shutdown Supply Current
0.1
Oscillator
FOSC
△f / △V
TDUTY
Operation Frequency
Frequency Change with Voltage
Maximum Duty Cycle
VFB=90% *Vref
MHZ
%
0.8
1.0
5
1.2
1.3
VIN=2.8V to 5.5V
90
%
Reference Voltage
VREF
Reference Voltage
Vout=5V
1.25 1.275
V
Rev1.0
Preliminary and all contents are subject to change without prior notice.
© Seaward Electronics, Inc. • www.seawardinc.com.cn • Page 4
1/7/2013
Vout=9V
2.23 2.275 2.32
0.05
Line Regulation
VIN=2.7V to 5.5V
%/V
Enable Control
VEN
VEN
Enable Voltage
0.9
V
V
Shutdown Voltage
0.7
MOSFET
Isw=4.5A
RDS (ON)
On Resistance of Driver
40
mΩ
Protection
Vout=5V
2.4
1.8
A
A
IOCP
OCP Current
Vout=9V
TOTP
OTP Temperature
+150
℃
Functional Description
Operation
Soft Start Function
The SE3510 is a current mode boost converter.
The constant switching frequency is 1MHz and
Soft start circuitry is integrated into SE3510 to avoid
inrush current during power on. After the IC is
operates with pulse width modulation (PWM). Build-in enabled, the output of error amplifier is clamped by
20V / 6A MOSFET provides a strong enough power the internal soft-start function, which causes PWM
output to provide either 5V/2A or 9V/1.5A. The control pulse widthto increase in a controlled fashion and
loop architecture is current mode control; The slope
compensation circuit is internally added to the current
signal to allow stable operation for duty cycles larger
than 50%.
thus reducing input input surge current.
Over Temperature Protection (OTP)
SE3510 will turn off the power MOSFET
automatically when the internal junction temperature
is over 150°C. The power MOSFET wakes up when
the junction temperature drops 20°C under the OTP
threshold temperature.
Internal QC2.0 Interface
The QC 2.0 interface circuitry is internally built-in
for SE3510. When the Device to be charged is first
connected to charger, SE3510 will attempt to
broadcast the QC2.0 interface signal to the Device. If
the devices is QC2.0 compatible and responses back
with standard QC2.0 information, and completes the
interface protocol, SE3510 will automatically deliver
9V and up to 1.5A to the device. On the other hand, if
the connected Device is not QC2.0 compatible, the
SE3510 will automatically deliver 5V and up to 2 A.
Rev1.0
Preliminary and all contents are subject to change without prior notice.
© Seaward Electronics, Inc. • www.seawardinc.com.cn • Page 5
1/7/2013
Application Information
Inductor Selection
Inductance value is decided based on different condition. 3.3uH to 4.7μH inductor value is recommended
for general application circuit. There are three important inductor specifications, DC resistance, saturation
current and core loss. Low DC resistance has better power efficiency. Also, it avoids inductor saturation which
will cause circuit system unstable and lower core loss at 1 MHZ.
Capacitor Selection
The output capacitor is required to maintain the DC voltage. Low ESR capacitors are preferred to reduce
the output voltage ripple. Ceramic capacitor of X5R and X7R are recommended, which have low equivalent
series resistance (ESR) and wider operation temperature range.
Diode Selection
Schottky diodes with fast recovery times and low forward voltages are recommended. Ensure the diode
average and peak current ratings exceed the average output current and peak inductor current. In addition, the
diode’s reverse breakdown voltage must exceed the output voltage.
Layout Considerations
1. The power traces, consisting of the GND trace, the SW trace and the VIN trace should be kept short, direct
and wide.
2.SW、L and D switching node, wide and short trace to reduce EMI.
3. Place CIN near VIN pin as closely as possible to maintain input voltage steady and filter out the pulsing input
current.
4. The resistive divider R1and R2 must be connected to FB pin directly as closely as possible.
5. FB is a sensitive node. Please keep it away from switching node, SW.
6. The GND of the IC, CIN and COUT should be connected close together directly to a ground plane.
Rev1.0
Preliminary and all contents are subject to change without prior notice.
© Seaward Electronics, Inc. • www.seawardinc.com.cn • Page 6
1/7/2013
Outline Drawing For SOP8
DIMENSIONS
INCHES
1
2
3
4
8
7
6
5
B
MM
DIMN
D
MIN
MAX
0.0532 0.0688
0.0040 0.0098
0.0130 0.0200
0.050 BSC
MIN
MAX
1.75
0.25
0.51
1.35
0.10
0.33
A
A1
B
B1
C
D
H
E
B1
A1
A
E
H
1.27 BSC
0.0075 0.0098
0.1890 0.1968
0.2284 0.2440
0.1497 0.1574
0.19
0.25
5.00
6.20
4.00
4.80
5.80
3.80
C
联系方式：
北京思旺电子技术有限公司–中国总部
地址：中国北京市海淀区信息路 22 号上地科技综合楼 B 座二层
邮编：100085
电话:010-82895700/1/5
传真:010-82895706
Seaward Electronics Corporation – 台湾办事处
2F, #181, Sec. 3, Minquan East Rd,
Taipei, Taiwan R.O.C
电话: 886-2-2712-0307
传真: 886-2-2712-0191
Seaward Electronics Incorporated – 北美办事处
1512 Centre Pointe Dr.
Milpitas, CA95035, USA
电话: 1-408-821-6600
Rev1.0
Preliminary and all contents are subject to change without prior notice.
© Seaward Electronics, Inc. • www.seawardinc.com.cn • Page 7
1/7/2013
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