SS3613 [SECELECTRONICS]

CMOS Omnipolar High Sensitivity Micropower Hall Switch;
SS3613
型号: SS3613
厂家: SEC Electronics Inc.    SEC Electronics Inc.
描述:

CMOS Omnipolar High Sensitivity Micropower Hall Switch

二极管
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SS3613  
CMOS Omnipolar High Sensitivity Micropower Hall Switch  
Features  
Micropower consumption for battery powered applications  
Omnipolar, output switches with absolute value of North or South pole from magnet  
Operation down to 2.5V  
High sensitivity for direct reed switch replacement applications  
CMOS inverter output(no pull-up resistance needed)  
3 pin TSOT23 (suffix ST)  
3 pin SIP (suffix UA)  
General Description  
The SS3613 Omnipolar Hall effect sensor IC is fab-  
ricated from mixed signal CMOS technology .It in-  
corporates advanced chopper-stabilization techniques  
to provide accurate and stable magnetic switch points.  
The circuit design provides an internally controlled  
clocking mechanism to cycle power to the Hall ele-  
ment and analog signal processing circuits. This  
serves to place the high current-consuming portions  
of the circuit into a “Sleep” mode. Periodically the  
device is “Awakened” by this internal logic and the  
magnetic flux from the Hall element is evaluated  
against the predefined thresholds. If the flux density  
is above or below the Bop/Brp thresholds then the  
output transistor is driven to change states according-  
ly. While in the “Sleep” cycle the output transistor is  
latched in its previous state. The design has been op-  
timized for service in applications requiring extended  
operating lifetime in battery powered systems.  
The output transistor of the SS3613 will be latched on  
(Bop) in the presence of a sufficiently strong South or  
North magnetic field facing the marked side of the  
package. The output will be latched off (Brp) in the  
absence of a magnetic field.  
Applications  
Solid state switch  
Handheld Wireless Handset Awake Switch  
Lid close sensor for battery powered devices  
Magnet proximity sensor for reed switch replacement in low duty cycle applications  
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V3.10 Nov 1, 2013  
SS3613  
CMOS Omnipolar High Sensitivity Micropower Hall Switch  
Typical Application Circuit  
SEC's pole-independent sensing technique allows for  
operation with either a north pole or south pole mag-  
net orientation, enhancing the manufacturability of the  
device. The state-of-the-art technology provides the  
same output polarity for either pole face.  
capacitor be connected (in close proximity to the Hall  
sensor) between the supply and ground of the device  
to reduce both external noise and noise generated by  
the chopper-stabilization technique. This is especially  
true due to the relatively high impedance of battery  
supplies.  
It is strongly recommended that an external bypass  
Functional Block Diagram  
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V3.10 Nov 1, 2013  
SS3613  
CMOS Omnipolar High Sensitivity Micropower Hall Switch  
Pin Definitions and Descriptions  
TSOT Pin SIP Pin №  
Name  
VDD  
Type  
Supply  
Output  
Ground  
Function  
Supply Voltage pin  
Open Drain Output pin  
Ground pin  
1
2
3
1
3
2
OUT  
GND  
Internal Timing Circuit  
Current  
Iaw  
Period  
Sample & Out-  
put Latched  
Iav  
Isp  
Awake Taw:120μs  
Sleep Tsl:70ms  
0
Time  
3
V3.10 Nov 1, 2013  
SS3613  
CMOS Omnipolar High Sensitivity Micropower Hall Switch  
Absolute Maximum Ratings  
Parameter  
Supply Voltage(operating)  
Symbol  
VDD  
IDD  
Value  
Units  
V
6
Supply Current  
5
6
mA  
V
Output Voltage  
VOUT  
IOUT  
TA  
Output Curent  
5
mA  
°C  
Operating Temperature Range  
Storage Temperature Rang  
ESD Sensitivity  
-40 to 85  
-50 to 150  
4000  
TS  
°C  
-
V
Exceeding the absolute maximum ratings may cause permanent damage. Exposure to absolute-maximum rated conditions for ex-  
tended periods may affect device reliability.  
DC Electrical Characteristics  
DC Operating Parameters: TA = 25°C, VDD=2.75V.  
Parameter  
Operating voltage  
Supply current  
Symbol  
VDD  
IDD  
Test Conditions  
Operating  
Min  
Typ  
3
Max  
Units  
V
2.5  
5.5  
Average  
5
μA  
mA  
V
Output Current  
IOUT  
VS AT  
TAW  
1.0  
0.4  
Saturation Voltage  
Awake mode time  
Sleep mode time  
IOUT=1mA  
Operating  
Operating  
175  
μS  
TSL  
70  
mS  
Magnetic Characteristics  
Output Voltage(V)  
3.0  
2.5  
OFF  
2.0  
BOPN  
BRPS  
BOPS  
1.5  
BRPN  
1.0  
0.5  
0
ON  
-80  
-60  
-40  
-20  
0
20  
40  
60  
80  
Magnetic Flux(Gauss)  
Operating Parameters: TA = 25°C, VDD=2.75VDC  
.
PARAMETER  
Operating Point  
Release Point  
Hysteresis  
Symbol  
Bop  
Min  
Type  
+/-35  
+/-27  
14  
Max  
+/-60  
Units  
-
+/-5  
-
Gs  
Gs  
Gs  
Brp  
-
-
Bhys  
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V3.10 Nov 1, 2013  
SS3613  
CMOS Omnipolar High Sensitivity Micropower Hall Switch  
ESD Protection  
Human Body Model (HBM) tests according to: Mil. Std. 883F method 3015.7  
Limit Values  
Parameter  
Symbol  
Unit  
Notes  
Min  
Max  
ESD Voltage  
VESD  
kV  
±4  
Performance Characteristics  
Unique Features  
CMOS Hall IC Technology  
The chopper stabilized amplifier uses switched capacitor techniques to eliminate the amplifier offset voltage,  
which, in bipolar devices, is a major source of temperature sensitive drift. CMOS makes this advanced technique  
possible. The CMOS chip is also much smaller than a bipolar chip, allowing very sophisticated circuitry to be  
placed in less space. The small chip size also contributes to lower physical stress and less power consumption.  
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V3.10 Nov 1, 2013  
SS3613  
CMOS Omnipolar High Sensitivity Micropower Hall Switch  
Installation Comments  
Consider temperature coefficients of Hall IC and magnetics , as well as air gap and life time variations. Observe  
temperature limits during wave soldering. Typical IR solder-reflow profile:  
No Rapid Heating and Cooling.  
Recommended Preheating for max. 2minutes at 150°C  
Recommended Reflowing for max. 5seconds at 240°C  
ESD Precautions  
Electronic semiconductor products are sensitive to Electro Static Discharge (ESD). Always observe Electro  
Static Discharge control procedures whenever handling semiconductor products.  
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V3.10 Nov 1, 2013  
SS3613  
CMOS Omnipolar High Sensitivity Micropower Hall Switch  
Package Information  
TSOT-23 Package Physical Characteristics:  
Notes  
Top View  
1). PINOUT: Pin 1 VDD  
3
Pin 2 Output  
Pin 3 GND  
2). All dimensions are in millimeters;  
2.65  
1.60  
1.70  
2.95  
1
2
1.70  
2.10  
Side View  
End View  
2.82  
3.02  
0.08  
0.20  
0.70  
0.90  
0.70  
0.80  
0.20  
Min  
0.00  
0.10  
0.35  
0.50  
TSOT-23 Package Hall Location  
Bottom View of TSOT-23 Package  
3
Chip  
0.36  
0.46  
0.95  
0.80  
2
1
1.50  
1.40  
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V3.10 Nov 1, 2013  
SS3613  
CMOS Omnipolar High Sensitivity Micropower Hall Switch  
TO-92 Package Physical Characteristics  
2.13  
1.87  
3° ± 1°  
1.00  
1.20  
45° ± 1°  
4.0 ± 0.01  
2
3
1
Sensor Location  
Active Area Depth:  
0.84(Nom)  
6° ± 1°  
3° ± 1°  
0.44± 0.01  
1
2
3
6° ± 1°  
3° ± 1°  
0.05 ± 0.05  
0.39± 0.01  
0.38 ± 0.01  
Notes:  
1). Controlling dimension : mm ;  
2). Leads must be free of flash and plating voids ;  
3). Do not bend leads within 1 mm of lead to package  
interface ;  
4). PINOUT: Pin 1 VDD  
Pin 2 GND  
Pin 3 Output  
1.27  
2.54  
Ordering Information  
Part No.  
Pb-free  
YES  
YES  
YES  
YES  
YES  
YES  
Temperature Code  
-40°C to 85°C  
Package Code  
TSOT-23  
TO-92  
Packing  
SS3613ESTT  
SS3613EUA  
SS3613KSTT  
SS3613KUA  
SS3613LSTT  
SS3613LUA  
7-in. reel, 3000 pieces/ reel  
Bulk, 1000 pieces/ bag  
7-in. reel, 3000 pieces/ reel  
Bulk, 1000 pieces/ bag  
7-in. reel, 3000 pieces/ reel  
Bulk, 1000 pieces/ bag  
-40°C to 85°C  
-40°C to 125°C  
-40°C to 125°C  
-40°C to 150°C  
-40°C to 150°C  
TSOT-23  
TO-92  
TSOT-23  
TO-92  
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V3.10 Nov 1, 2013  

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