SS648KUA [SECELECTRONICS]
CMOS Omnipolar High Sensitivity Micropower Hall Switch;
| 型号： | SS648KUA |
| 厂家： | 
SEC Electronics Inc. |
| 描述： | CMOS Omnipolar High Sensitivity Micropower Hall Switch |
| 文件： | 总10页 (文件大小：334K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SS648
CMOS Omnipolar High Sensitivity Micropower Hall Switch
Features
−
−
−
−
Micropower consumption for battery powered applications
Omnipolar, output switches with absolute value of North or South pole from magnet
Operation down to 2.5V
High sensitivity for direct reed switch replacement applications
Applications
−
−
−
−
Solid state switch
Handheld Wireless Handset Awake Switch
Lid close sensor for battery powered devices
Magnet proximity sensor for reed switch replacement in low duty cycle applications
3 pin SOT23 (suffix SO)
3 pin SIP (suffix UA)
General Description
The SS648 Omnipolar Hall effect sensor IC is fabri-
cated from mixed signal CMOS technology .It incor-
porates advanced chopper-stabilization techniques to
provide accurate and stable magnetic switch points.
The circuit design provides an internally controlled
clocking mechanism to cycle power to the Hall ele-
ment and analog signal processing circuits. This
serves to place the high current-consuming portions
of the circuit into a “Sleep” mode. Periodically the
device is “Awakened” by this internal logic and the
magnetic flux from the Hall element is evaluated
against the predefined thresholds. If the flux density
is above or below the Bop/Brp thresholds then the
output transistor is driven to change states according-
ly. While in the “Sleep” cycle the output transistor is
latched in its previous state. The design has been op-
timized for service in applications requiring extended
operating lifetime in battery powered systems.
The output transistor of the SS648 will be latched on
(Bop) in the presence of a sufficiently strong South or
North magnetic field facing the marked side of the
package. The output will be latched off (Brp) in the
absence of a magnetic field.
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V3.1 Nov 1, 2013
SS648
CMOS Omnipolar High Sensitivity Micropower Hall Switch
Typical Application Circuit
SEC's pole-independent sensing technique allows for
operation with either a north pole or south pole mag-
net orientation, enhancing the manufacturability of the
device. The state-of-the-art technology provides the
same output polarity for either pole face.
capacitor be connected (in close proximity to the Hall
sensor) between the supply and ground of the device
to reduce both external noise and noise generated by
the chopper-stabilization technique. This is especially
true due to the relatively high impedance of battery
supplies.
It is strongly recommended that an external bypass
Functional Block Diagram
VDD
Sleep/Awake
Logic
OUT
Chopper
Hall
Plate
GND
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V3.1 Nov 1, 2013
SS648
CMOS Omnipolar High Sensitivity Micropower Hall Switch
Pin Definitions and Descriptions
SOT Pin № SIP Pin №
Name
VDD
Type
Supply
Output
Ground
Function
Supply Voltage pin
Open Drain Output pin
Ground pin
1
2
3
1
3
2
OUT
GND
Internal Timing Circuit
Current
Iaw
Period
Sample & Out-
put Latched
Iav
Isp
Awake Taw:175μs
Sleep Tsl:70ms
0
Time
3
V3.1 Nov 1, 2013
SS648
CMOS Omnipolar High Sensitivity Micropower Hall Switch
Absolute Maximum Ratings
Parameter
Supply Voltage(operating)
Symbol
VDD
IDD
Value
Units
V
6
Supply Current
5
6
mA
V
Output Voltage
VOUT
IOUT
TA
Output Curent
5
mA
°C
Operating Temperature Range
Storage Temperature Rang
ESD Sensitivity
-40 to 85
-50 to 150
4000
TS
°C
-
V
Exceeding the absolute maximum ratings may cause permanent damage. Exposure to absolute-maximum rated conditions for ex-
tended periods may affect device reliability.
DC Electrical Characteristics
DC Operating Parameters: TA = 25°C, VDD=2.75V.
Parameter
Operating voltage
Supply current
Symbol
VDD
IDD
Test Conditions
Operating
Min
Typ
3
Max
Units
V
2.5
5.5
Average
5
μA
mA
V
Output Current
IOUT
VS AT
TAW
1.0
0.4
Saturation Voltage
Awake mode time
Sleep mode time
IOUT=1mA
Operating
Operating
175
μS
TSL
70
mS
Magnetic Characteristics
Output Voltage(V)
BOPN
BRPS
BOPS
1.5
BRPN
0.5
0
ON
-20
80
Magnetic Flux(Gauss)
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V3.1 Nov 1, 2013
SS648
CMOS Omnipolar High Sensitivity Micropower Hall Switch
Operating Parameters: TA = 25°C, VDD=2.75VDC
.
PARAMETER
Operating Point
Release Point
Hysteresis
Symbol
Bop
Min
Type
+/-35
+/-21
14
Max
Units
Gs
-
+/-5
-
+/-60
Brp
-
-
Gs
Bhys
Gs
ESD Protection
Human Body Model (HBM) tests according to: Mil. Std. 883F method 3015.7
Limit Values
Parameter
Symbol
Unit
Notes
Min
Max
ESD Voltage
VESD
kV
±4
Performance Characteristics
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V3.1 Nov 1, 2013
SS648
CMOS Omnipolar High Sensitivity Micropower Hall Switch
Unique Features
CMOS Hall IC Technology
The chopper stabilized amplifier uses switched capacitor techniques to eliminate the amplifier offset voltage,
which, in bipolar devices, is a major source of temperature sensitive drift. CMOS makes this advanced technique
possible. The CMOS chip is also much smaller than a bipolar chip, allowing very sophisticated circuitry to be
placed in less space. The small chip size also contributes to lower physical stress and less power consumption.
Installation Comments
Consider temperature coefficients of Hall IC and magnetics , as well as air gap and life time variations. Observe
temperature limits during wave soldering. Typical IR solder-reflow profile:
−
−
−
No Rapid Heating and Cooling.
Recommended Preheating for max. 2minutes at 150°C
Recommended Reflowing for max. 5seconds at 240°C
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V3.1 Nov 1, 2013
SS648
CMOS Omnipolar High Sensitivity Micropower Hall Switch
Package Information
Package SO, 3-Pin SOT-23:
Notes
Top View
1). PINOUT: Pin 1 VDD
Pin 2 Output
Pin 3 GND
3
2). All dimensions are in millimeters;
2.60
3.00
1.50
1.80
1
2
1.70
2.10
Side View
End View
2.70
3.10
0.10
0.25
1.00
1.30
0.70
0.90
0.20
Min
0.00
0.10
0.35
0.50
SOT-23 Package Hall Location
Bottom View of SOT-23 Package
3
Chip
0.56
0.66
0.95
0.80
2
1
1.50
1.40
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V3.1 Nov 1, 2013
SS648
CMOS Omnipolar High Sensitivity Micropower Hall Switch
Package ST, 3-Pin TSOT-23:
Notes
Top View
1). PINOUT: Pin 1 VDD
Pin 2 Output
Pin 3 GND
3
2). All dimensions are in millimeters;
2.65
2.95
1.60
1.70
1
2
1.70
2.10
Side View
End View
2.82
3.02
0.08
0.20
0.70
0.90
0.70
0.80
0.20
Min
0.00
0.10
0.35
0.50
TSOT-23 Package Hall Location
Bottom View of TSOT-23 Package
3
Chip
0.36
0.46
0.95
0.80
2
1
1.50
1.40
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V3.1 Nov 1, 2013
SS648
CMOS Omnipolar High Sensitivity Micropower Hall Switch
Package UA, 3-Pin SIP:
2.13
1.87
3° ± 1°
1.00
1.20
45° ± 1°
4.0 ± 0.01
2
3
1
Sensor Location
Active Area Depth:
0.84(Nom)
6° ± 1°
3° ± 1°
0.44± 0.01
1
2
3
6° ± 1°
3° ± 1°
0.05 ± 0.05
0.39± 0.01
0.38 ± 0.01
Notes:
1). Controlling dimension : mm ;
2). Leads must be free of flash and plating voids ;
3). Do not bend leads within 1 mm of lead to package
interface ;
4). PINOUT: Pin 1 VDD
Pin 2 GND
Pin 3 Output
1.27
2.54
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V3.1 Nov 1, 2013
SS648
CMOS Omnipolar High Sensitivity Micropower Hall Switch
ESD Precautions
Electronic semiconductor products are sensitive to Electro Static Discharge (ESD). Always observe Electro Static
Discharge control procedures whenever handling semiconductor products.
Ordering Information
Part No.
Pb-free
YES
YES
YES
YES
YES
YES
YES
YES
YES
Temperature Code
-40°C to 85°C
-40°C to 85°C
-40°C to 85°C
-40°C to 125°C
-40°C to 125°C
-40°C to 125°C
-40°C to 150°C
-40°C to 150°C
-40°C to 150°C
Package Code
SOT-23
Packing
SS648ESOT
SS648ESTT
SS648EUA
SS648KSOT
SS648KSTT
SS648KUA
SS648LSOT
SS648LSTT
SS648LUA
7-in. reel, 3000 pieces/ reel
7-in. reel, 3000 pieces/ reel
Bulk, 1000 pieces/ bag
7-in. reel, 3000 pieces/ reel
7-in. reel, 3000 pieces/ reel
Bulk, 1000 pieces/ bag
7-in. reel, 3000 pieces/ reel
7-in. reel, 3000 pieces/ reel
Bulk, 1000 pieces/ bag
TSOT-23
TO-92
SOT-23
TSOT-23
TO-92
SOT-23
TSOT-23
TO-92
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V3.1 Nov 1, 2013
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