2N2222A [SECOS]
NPN Plastic Encapsulated Transistor; NPN塑料封装晶体管
| 型号： | 2N2222A |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | NPN Plastic Encapsulated Transistor |
| 文件： | 总3页 (文件大小：1397K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2N2222A
NPN Plastic Encapsulated Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURE
TO-92
Complementary PNP type available 2N2907A
G
H
1Emitter
2Base
3Collector
Collector
J
3
A
D
B
2
Base
Millimeter
REF.
PACKAGING INFORMATION
Min.
Max.
4.70
4.70
-
K
A
B
C
D
E
F
4.40
4.30
12.70
3.30
0.36
0.36
Weight: 0.2056 g
1
Emitter
3.81
0.56
0.51
E
C
F
G
H
J
1.27 TYP.
1.10
2.42
0.36
-
2.66
0.76
K
ABSOLUTE MAXIMUM RATINGS (at TA = 25°C unless otherwise specified)
Parameter
Symbol
VCBO
Ratings
Unit
V
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
75
VCEO
40
V
VEBO
6
600
V
Collector Current – Continuous
Collector Power Dissipation
Junction, Storage Temperature
IC
mA
mW
℃
PC
625
TJ, TSTG
+150, -55 ~ +150
ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Min.
Typ.
Max.
-
Unit
V
Test Conditions
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
75
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IC = 10uA, IE = 0
40
-
V
IC = 10mA, IB = 0
6
-
V
IE = 10uA, IC = 0
-
10
10
100
300
-
nA
nA
nA
VCB = 60V, IE = 0
Collector Cut-off Current
ICEX
-
VCE = 60V, VEB(Off) = 3V
VEB = 3V, IC = 0
Emitter Cut-off Current
IEBO
-
hFE(1)
100
VCE = 10V, IC = 150mA
VCE = 10V, IC = 0.1mA
VCE = 10V, IC = 500mA
IC = 500mA, IB = 50mA
IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
DC Current Gain
hFE(2)
40
hFE(3)*
VCE(sat)(1) *
VCE(sat)(2) *
VBE(sat) *
td
42
-
-
0.6
0.3
1.2
10
25
225
60
-
V
V
Collector-Emitter Saturation Voltage
-
Base-Emitter Saturation Voltage
Delay Time
-
V
-
nS
nS
nS
nS
VCC = 30V, VEB(Off) = -0.5V, IC = 150mA,
B1 = 15mA
I
Rise Time
tr
-
Storage Time
ts
-
-
VCC = 30V, Ic = 150mA,
B1 = IB2 = 15mA
I
Fall Time
tf
Transition Frequency
fT
300
MHz VCE = 20V, IC = 20mA, f = 100MHz
* Pulse Test
CLASSIFICATION OF hFE(1)
Rank
L
H
Range
100 - 200
200 - 300
01-June-2005 Rev. B
Page 1 of 3
2N2222A
NPN Plastic Encapsulated Transistor
Elektronische Bauelemente
CHARACTERISTIC CURVES
01-June-2005 Rev. B
Page 2 of 3
2N2222A
NPN Plastic Encapsulated Transistor
Elektronische Bauelemente
CHARACTERISTIC CURVES
01-June-2005 Rev. B
Page 3 of 3
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