2N5172 [SECOS]
NPN Plastic Encapsulated Transistor; NPN塑料封装晶体管
| 型号： | 2N5172 |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | NPN Plastic Encapsulated Transistor |
| 文件： | 总1页 (文件大小：76K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2N5172
0.5 A, 25 V
NPN Plastic Encapsulated Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
TO-92
General Purpose Amplifier Transistor
G
H
Emitter
Collector
Base
J
A
D
Millimeter
Collector
REF.
Min.
4.40
4.30
12.70
3.30
0.36
0.36
Max.
4.70
4.70
-
3.81
0.56
0.51
B
A
B
C
D
E
F
K
Base
G
H
J
1.27 TYP.
E
C
F
1.10
2.42
0.36
-
Emitter
2.66
0.76
K
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Rating
Unit
Collector to Base Voltage
VCBO
VCEO
VEBO
IC
25
V
V
Collector to Emitter Voltage
Emitter to Base Voltage
25
5
0.5
V
Collector Current - Continuous
Collector Power Dissipation
Thermal resistance, junction to ambient
Junction, Storage Temperature
A
PC
625
mW
°C / W
°C
RθJA
TJ, TSTG
200
150, -55~150
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Min
Typ
Max
Unit
Test Condition
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut-Off Current
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
25
25
5
-
-
-
-
-
-
-
-
-
-
V
V
IC=0.01mA, IE=0A
IC=10mA, IB=0A
-
V
IE=0.01mA, IC=0A
VCB=25V, IE=0A
-
0.1
0.1
500
0.25
1.2
μA
μA
Emitter Cut-Off Current
IEBO
-
VEB= 5V, IC=0mA
VCE=10V, IC=10mA
IC=10mA, IB =1mA
VCE=10V, IC =10mA
DC Current Gain
hFE
100
-
Collector to Emitter Saturation Voltage
Base to Emitter Saturation Voltage
VCE(sat)
VBE(sat)
V
V
0.5
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
29-Dec-2010 Rev. A
Page 1 of 1
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