2SC1623 [SECOS]
NPN Epitaxial Planar Transistor; NPN外延平面晶体管
| 型号： | 2SC1623 |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | NPN Epitaxial Planar Transistor |
| 文件： | 总2页 (文件大小：149K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SC1623
150 mA, 60 V
NPN Epitaxial Planar Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead free
DESCRIPTION
The 2SC1623 is designed for use driver stage of AF amplifier and general purpose application.
PACKAGE DIMENSIONS
SC-59
A
Dim
A
Min
2.70
1.30
1.00
0.35
Max
3.10
1.70
1.30
0.50
L
3
B
S
B
Top View
2
1
C
D
D
G
H
1.90 REF.
G
0.00
0.10
0.20
1.25
2.25
0.10
J
J
0.26
0.60
1.65
3.00
C
K
K
H
L
COLLECTOR
S
BASE
All Dimension in mm
EMITTER
ABSOLUTE MAXIMUM RATINGS at Ta = 25°C
Parameter
Symbol
Ratings
Unit
V
Collector to Base Voltage
VCBO
VCEO
VEBO
IC
60
50
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Currrent
V
5
V
150
250
mA
mW
℃
Total Power Dissipation
Junction, Storage Temperature
Pd
TJ, TSTG
+150, -55 ~ +150
CHARACTERISTICS at Ta = 25°C
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
60
50
5
-
-
-
-
-
-
-
-
-
-
-
-
-
V
IC=100uA
IC=1mA
BVCEO
BVEBO
ICBO
-
V
-
V
IE=10uA
VCB=60V
VEB=5V
-
100
100
250
1.0
600
-
nA
nA
mV
V
IEBO
-
*VCE(sat)
*VBE(sat)1
*hFE1
*hFE2
-
IC=100mA, IB=10mA
IC=100mA, IB=10mA
VCE=6V, IC=1mA
-
90
25
80
80
-
VCE=6V, IC=150mA
VCE=1V, IC=10mA
*hFE3
-
fT
-
MHz
pF
VCE=10V, IC=1mA, f=100MHz
VCB=10V, f=1MHz, IE=0A
Cob
3.5
* Pulse Test: Pulse Width≦380μs, Duty Cycle≦2%
CLASSIFICATION OF hFE1
Rank
P
Y
G
B
Range
90 - 180
135 - 270
200 - 400
300 - 600
01-June-2002 Rev. A
Page 1 of 2
2SC1623
150 mA, 60 V
NPN Epitaxial Planar Transistor
Elektronische Bauelemente
CHARACTERISTIC CURVES
01-June-2002 Rev. A
Page 2 of 2
相关型号：
2SC1623-L6-TP
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, PLASTIC, PACKAGE-3
MCC
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