2SC1674 [SECOS]
NPN Plastic Encapsulated Transistor; NPN塑料封装晶体管
| 型号： | 2SC1674 |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | NPN Plastic Encapsulated Transistor |
| 文件： | 总1页 (文件大小：79K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SC1674
0.02 A , 30 V
NPN Plastic Encapsulated Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
TO-92
FEATURES
General Purpose Switching and Amplification
G
H
Emitter
Collector
Base
J
CLASSIFICATION OF hFE
A
D
Millimeter
REF.
Min.
4.40
4.30
12.70
3.30
0.36
0.36
Max.
4.70
4.70
-
3.81
0.56
0.51
Product-Rank
2SC1674-Y 2SC1674-GR 2SC1674-BL
B
A
B
C
D
E
F
Range
40~80 60~120 90~180
K
G
H
J
1.27 TYP.
E
C
F
1.10
2.42
0.36
-
2.66
0.76
K
Collector
Base
Emitter
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Rating
Unit
Collector to Base Voltage
VCBO
VCEO
VEBO
IC
30
V
V
Collector to Emitter Voltage
20
Emitter to Base Voltage
4
20
V
Collector Current - Continuous
Collector Power Dissipation
mA
mW
°C / W
°C
PC
250
Thermal Resistance From Junction To Ambient
Junction, Storage Temperature
RθJA
TJ, TSTG
500
150, -55~150
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ. Max.
Unit
Test Conditions
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut – Off Current
Collector Cut – Off Current
Emitter Cut – Off Current
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
30
-
-
-
-
-
-
-
-
-
-
-
-
-
V
V
IC=0.1mA, IE=0
IC=1mA, IB=0
20
4
-
V
IE=0.1mA, IC=0
VCB=30V, IE=0
VCE=20V, IB=0
VEB=3V, IC=0
-
0.1
0.1
0.1
180
0.3
0.77
-
μA
μA
μA
ICEO
-
-
IEBO
DC Current Gain
hFE
40
-
VCE=6V, IC=1mA
IC=10mA, IB=1mA
VCE=6V, IC=1mA
Collector to Emitter Saturation Voltage
Base to Emitter voltage
VCE(sat)
VBE
V
V
0.65
400
-
Transition Frequency
fT
MHz VCE=6V, IC=1mA
pF VCB=6V, IE=0, f=1MHz
Collector Output Capacitance
Cob
1.3
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
21-Feb-2011 Rev. A
Page 1 of 1
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