2SD1468 [SECOS]
NPN Plastic-Encapsulated Transistor;型号: | 2SD1468 |
厂家: | SECOS HALBLEITERTECHNOLOGIE GMBH |
描述: | NPN Plastic-Encapsulated Transistor |
文件: | 总1页 (文件大小:66K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
2SD1468
1A , 30V
NPN Plastic-Encapsulated Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
TO-92
FEATURES
ꢀ
ꢀ
ꢀ
Low Saturation Voltage
Ideal for Low Voltage, High Current Dribes
High DC Current Gain and High Current
Millimeter
REF.
Min.
Max.
4.70
4.70
-
3.81
0.56
0.51
A
B
C
D
E
F
G
H
J
4.40
4.30
12.70
3.30
0.36
0.36
CLASSIFICATION OF hFE
Product-Rank 2SD1468-Q
2SD1468-R
180~390
2SD1468-S
270~560
1.27 TYP.
1.10
2.42
0.36
-
Range
120~270
2.66
0.76
K
1Emitter
2Collector
3Base
Collector
2
3
Base
1
Emitter
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Rating
Unit
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
VCBO
VCEO
VEBO
IC
30
15
5
V
V
V
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
1
A
PC
625
W
°C
TJ, TSTG
150, -55~150
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol Min.
Typ. Max.
Unit
Test Condition
IC=50µA, IE=0
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut – Off Current
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
30
15
5
-
-
-
-
-
-
-
-
-
-
-
V
V
IC=1mA, IB=0
-
V
IE=50µA, IC=0
-
0.5
0.5
560
0.4
-
µA
µA
VCB=20V, IE=0
VEB=4V, IC=0
Emitter Cut – Off Current
IEBO
-
DC Current Gain
hFE
120
-
VCE=3V, IC=100mA
IC=500mA, IB=50mA
Collector to Emitter Saturation Voltage
Transition Frequency
VCE(sat)
fT
V
50
-
MHz VCE=5V, IC=50mA, f=100MHz
pF CB=10V, IE=0, f=1MHz
Collector Output Capacitance
Cob
30
V
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
26-Mar-2012 Rev. A
Page 1 of 1
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