2SD1766 [SECOS]
2A, 40V NPN Epitaxial Planar Transistor;
| 型号： | 2SD1766 |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | 2A, 40V NPN Epitaxial Planar Transistor |
| 文件： | 总2页 (文件大小：248K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SD1766
2A, 40V
NPN Epitaxial Planar Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOT-89
DESCRIPTION
The 2SD1766 is suited for the output stage of 0.5W audio,
voltage regulator, and relay driver.
4
1
2
3
A
E
C
CLASSIFICATION OF hFE
2SD1766-P
82~180
DBP
2SD1766-Q
120~270
DBQ
2SD1766-R
180~390
DBR
Product Rank
B
D
1. Base
F
G
H
Range
2. Collector
3. Emitter
K
J
L
Marking
Millimeter
Min. Max.
Millimeter
REF.
REF.
Min.
Max.
A
B
C
D
4.40
3.94
1.40
2.30
4.60
4.25
1.60
2.60
G
H
J
0.40
1.50 TYP
3.00 TYP
0.32
0.35
0.58
PACKAGE INFORMATION
Collector
K
0.52
0.44
2
Package
MPQ
1K
Leader Size
7’ inch
E
F
1.50
0.89
1.70
1.20
L
SOT-89
1
Base
3
Emitter
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Unit
Parameter
Symbol
Ratings
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Total Power Dissipation
Junction & Storage temperature
VCBO
VCEO
VEBO
IC
PD
TJ, TSTG
40
32
5.0
2.0
0.5
V
V
V
A
W
°C
150, -55~150
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Collector-base breakdown voltage
V(BR)CBO
40
-
-
V
IC= 50 µA, IE=0
Collector-emitter breakdown
voltage
V(BR)CEO
32
-
-
V
IC= 1 mA, IB=0
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
V(BR)EBO
ICBO
5.0
-
-
-
-
1
V
IE= 50 µA, IC=0
VCB= 20 V, IE=0
VEB= 4 V, IC=0
-
-
µA
µA
IEBO
1
DC current gain
hFE
82
-
-
390
0.8
-
VCE= 3 V, IC= 0.5 A
IC= 2 A, IB= 0.2 A
Collector-emitter saturation voltage
Transition frequency
VCE(sat)
f T
-
V
-
100
30
MHz VCE=5V, IE=50mA, f=100MHz
Output Capacitance
COB
-
-
pF
VCB=10V, IE=0, f=1MHz
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
04-Nov-2014 Rev. A
Page 1 of 2
2SD1766
2A, 40V
NPN Epitaxial Planar Transistor
Elektronische Bauelemente
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
04-Nov-2014 Rev. A
Page 2 of 2
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