2SD2136 [SECOS]
NPN Plastic Encapsulated Transistor;
| 型号： | 2SD2136 |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | NPN Plastic Encapsulated Transistor |
| 文件： | 总2页 (文件大小：258K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SD2136
3A , 60V
NPN Plastic Encapsulated Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
TO-126
ꢀ
ꢀ
ꢀ
Low frequency power amplifier
Low Collector-Emitter Saturation Voltage VCE(sat)
High Forward Current Transfer Ratio hFE Which has
Satisfactory Linearity.
1Emitter
2Collector
3Base
A
B
E
CLASSIFICATION OF hFE (1)
F
C
D
Product-Rank
2SD2136-P
2SD2136-Q
70~150
2SD2136-R
120~250
N
H
J
L
Range
40~90
M
K
Collector
G
2
Millimeter
Min. Max.
Millimeter
REF.
REF.
Min.
1.10
0.45
0.66
2.10
1.17
3.00
Max.
1.50
0.60
0.86
2.30
1.37
3.20
A
B
C
D
E
F
7.40
2.50
7.80
2.90
H
J
K
L
M
N
3
Base
10.60
15.30
3.70
11.00
15.70
3.90
1
Emitter
3.90
4.10
G
2.29 TYP.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Collector to Base Voltage
Symbol
Rating
Unit
VCBO
VCEO
VEBO
IC
60
60
V
V
Collector to Emitter Voltage
Emitter to Base Voltage
6
V
Collector Current - Continuous
Collector Power Dissipation
3
A
PC
1.25
100
W
Thermal Resistance From Junction To Ambient
Junction, Storage Temperature
RθJA
TJ, TSTG
°C / W
°C
150, -55~150
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ. Max.
Unit
Test Conditions
IC=0.1mA, IE=0
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage 1
Emitter to Base Breakdown Voltage
Collector Cut – Off Current
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
60
60
6
-
-
-
-
V
V
IC=30mA, IB=0
IE=0.1mA, IC=0
VCB=60V, IE=0
VCE=60V, IB=0
-
-
V
-
-
200
300
1
µA
µA
Collector Cut – Off Current
ICEO
-
-
Emitter Cut – Off Current
IEBO
-
-
mA VEB=6V, IC=0
VCE=4V, IC=1A
hFE (1)
hFE (2)
VCE(sat)
VBE
40
10
-
-
250
-
DC Current Gain 1
-
VCE=4V, IC=3A
Collector to Emitter Saturation Voltage 1
Collector Output Capacitance 1
Transition Frequency
-
1.2
1.8
-
V
V
IC=3A, IB=375mA
VCE=4V, IC=3A
-
-
fT
-
30
MHz VCE=5V, IC=100mA, f=10MHz
Note:
1. Pulse test: pulse width ≤300µs, duty cycle≤ 2.0%.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
03-Dec-2013 Rev. A
Page 1 of 2
2SD2136
3A , 60V
NPN Plastic Encapsulated Transistor
Elektronische Bauelemente
RATINGS AND CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
03-Dec-2013 Rev. A
Page 2 of 2
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