BAS05 [SECOS]

Surface Mount Schottky Barrier Diodes; 表面贴装肖特基势垒二极管
BAS05
型号: BAS05
厂家: SECOS HALBLEITERTECHNOLOGIE GMBH    SECOS HALBLEITERTECHNOLOGIE GMBH
描述:

Surface Mount Schottky Barrier Diodes
表面贴装肖特基势垒二极管

二极管
文件: 总2页 (文件大小:238K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BAS40/-04/-05/-06  
Surface Mount Schottky Barrier Diodes  
Elektronische Bauelemente  
RoHS Compliant Product  
A suffix of “-C” specifies halogen & lead-free  
FEATURES  
SOT-23  
Min  
z
z
z
Low Turn-on Voltage  
Low Forward Voltage  
Very Low Capacitance  
Less Than 5.0pF @ 0V  
For high speed switching application,  
circuit protection  
Collector  
3
Dim  
A
B
C
D
G
H
J
Max  
2.800 3.040  
1.200 1.400  
0.890 1.110  
0.370 0.500  
1.780 2.040  
0.013 0.100  
0.085 0.177  
0.450 0.600  
0.890 1.020  
2.100 2.500  
0.450 0.600  
1
Base  
2
Emitter  
z
A
L
J
MECHANICAL DATA  
K
3
K
L
z
Case: SOT-23, Molded Plastic  
Terminals: Solderable per MIL-STD-202,  
Method 208  
S
Top View  
G
B
1
2
z
C
S
V
H
D
V
z
z
z
Polarity: See Diagrams Below  
Weight: 0.008 grams (approx.)  
Mounting Position: Any  
All Dimension in mm  
3
3
3
3
1
2
2
2
2
1
1
1
BAS40 Marking: 43  
BAS40-04 Marking: 44  
BAS40-05 Marking: 45  
BAS40-06 Marking: 46  
ABSOLUTE MAXIMUM RATINGS at Ta = 25°C  
Parameter  
Symbol  
Ratings  
Unit  
V
Reverse Voltage  
VR  
IF  
40  
Forward Continuous Current  
200  
mA  
mA  
Single Forward Current, t10 ms  
Thermal Resistance (Note 1)  
JunctiontoAmbient (Note 2)  
Forward Power Dissipation  
@ TA = 25°C  
IFSM  
600  
508  
311  
RθJA  
°C/W  
325  
1.8  
mW  
PF  
mW / °C  
Derate above 25°C  
Junction, Storage Temperature  
TJ, TSTG  
-55 ~ +150  
°C  
ELECTRICAL CHARACTERISTICS (at Ta = 25°C unless otherwise specified)  
Parameters  
Reverse Breakdown Voltage  
Reverse Current  
Symbol  
Min.  
Max.  
Unit  
Test Conditions  
V(BR)R  
40  
-
V
IR = 10 μA  
IR  
VF1  
VF2  
CTOT  
tRR  
-
-
-
-
-
200  
380  
1000  
5.0  
nA  
mV  
mV  
pF  
VR = 30V  
IF = 1mA  
Forward Voltage  
IF = 40mA  
Diode Capacitance  
VR = 0, f=1MHz  
IRR = 1 mA, IR=IF=10mA, RL=100Ω  
Reverse Recovery Time  
5
nS  
http://www.SeCoSGmbH.com  
Any changes of specification will not be informed individually.  
22-Sept-2008 Rev.C  
Page 1 of 2  
BAS40/-04/-05/-06  
Surface Mount Schottky Barrier Diodes  
Elektronische Bauelemente  
RATINGS AND CHARACTERISTIC CURVES  
100  
100  
T
= 150 C  
125 C  
A
10  
10  
85 C  
1.0  
150 C  
0.1  
1.0  
0.1  
125 C  
85 C  
25 C  
25 C  
5
0.01  
-40 C  
0.3  
-55 C  
0.4  
0.5  
0.001  
0
0.1  
0.2  
0.6  
0.7  
0.8  
0
10  
15  
20  
25  
30  
35  
40  
V
, Reverse Voltage (V)  
R
V , Forward Voltage (V)  
F
Figure 1. Typical Forward Voltage  
Figure 2. Reverse Current versus Reverse  
Voltage  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0
0
5.0  
10  
15  
20  
25  
30  
35  
40  
V
, Reverse Voltage (V)  
R
Figure 3. Typical Capacitance  
http://www.SeCoSGmbH.com  
Any changes of specification will not be informed individually.  
22-Sept-2008 Rev.C  
Page 2 of 2  

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