BAS05 [SECOS]
Surface Mount Schottky Barrier Diodes; 表面贴装肖特基势垒二极管型号: | BAS05 |
厂家: | SECOS HALBLEITERTECHNOLOGIE GMBH |
描述: | Surface Mount Schottky Barrier Diodes |
文件: | 总2页 (文件大小:238K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BAS40/-04/-05/-06
Surface Mount Schottky Barrier Diodes
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
SOT-23
Min
z
z
z
Low Turn-on Voltage
Low Forward Voltage
Very Low Capacitance
Less Than 5.0pF @ 0V
For high speed switching application,
circuit protection
Collector
3
Dim
A
B
C
D
G
H
J
Max
2.800 3.040
1.200 1.400
0.890 1.110
0.370 0.500
1.780 2.040
0.013 0.100
0.085 0.177
0.450 0.600
0.890 1.020
2.100 2.500
0.450 0.600
1
Base
2
Emitter
z
A
L
J
MECHANICAL DATA
K
3
K
L
z
Case: SOT-23, Molded Plastic
Terminals: Solderable per MIL-STD-202,
Method 208
S
Top View
G
B
1
2
z
C
S
V
H
D
V
z
z
z
Polarity: See Diagrams Below
Weight: 0.008 grams (approx.)
Mounting Position: Any
All Dimension in mm
3
3
3
3
1
2
2
2
2
1
1
1
BAS40 Marking: 43
BAS40-04 Marking: 44
BAS40-05 Marking: 45
BAS40-06 Marking: 46
ABSOLUTE MAXIMUM RATINGS at Ta = 25°C
Parameter
Symbol
Ratings
Unit
V
Reverse Voltage
VR
IF
40
Forward Continuous Current
200
mA
mA
Single Forward Current, t≦10 ms
Thermal Resistance (Note 1)
Junction−to−Ambient (Note 2)
Forward Power Dissipation
@ TA = 25°C
IFSM
600
508
311
RθJA
°C/W
325
1.8
mW
PF
mW / °C
Derate above 25°C
Junction, Storage Temperature
TJ, TSTG
-55 ~ +150
°C
ELECTRICAL CHARACTERISTICS (at Ta = 25°C unless otherwise specified)
Parameters
Reverse Breakdown Voltage
Reverse Current
Symbol
Min.
Max.
Unit
Test Conditions
V(BR)R
40
-
V
IR = 10 μA
IR
VF1
VF2
CTOT
tRR
-
-
-
-
-
200
380
1000
5.0
nA
mV
mV
pF
VR = 30V
IF = 1mA
Forward Voltage
IF = 40mA
Diode Capacitance
VR = 0, f=1MHz
IRR = 1 mA, IR=IF=10mA, RL=100Ω
Reverse Recovery Time
5
nS
http://www.SeCoSGmbH.com
Any changes of specification will not be informed individually.
22-Sept-2008 Rev.C
Page 1 of 2
BAS40/-04/-05/-06
Surface Mount Schottky Barrier Diodes
Elektronische Bauelemente
RATINGS AND CHARACTERISTIC CURVES
100
100
T
= 150 C
125 C
A
10
10
85 C
1.0
150 C
0.1
1.0
0.1
125 C
85 C
25 C
25 C
5
0.01
-40 C
0.3
-55 C
0.4
0.5
0.001
0
0.1
0.2
0.6
0.7
0.8
0
10
15
20
25
30
35
40
V
, Reverse Voltage (V)
R
V , Forward Voltage (V)
F
Figure 1. Typical Forward Voltage
Figure 2. Reverse Current versus Reverse
Voltage
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0
5.0
10
15
20
25
30
35
40
V
, Reverse Voltage (V)
R
Figure 3. Typical Capacitance
http://www.SeCoSGmbH.com
Any changes of specification will not be informed individually.
22-Sept-2008 Rev.C
Page 2 of 2
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