BAS16W [SECOS]
Small Signal Switching Diode; 小信号开关二极管
| 型号： | BAS16W |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | Small Signal Switching Diode |
| 文件： | 总2页 (文件大小：162K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BAS16W
Small Signal Switching Diode
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOT-323
FEATURES
A
z
z
z
Fast Switching Speed
For General Purpose Switching Applications
High Conductance
L
3
3
Top View
C B
1
1
2
2
K
F
E
D
MARKING: A2
G
H
J
Millimeter
Millimeter
3
REF.
REF.
Min.
Max.
2.20
2.45
1.35
1.10
Min.
0.20
-
Max.
0.40
-
A
B
C
D
2.00
2.15
1.15
0.90
F
G
H
J
0.525 REF.
1
2
0.08
0.15
E
1.20
1.40
ABSOLUTE MAXIMUM RATINGS (Single diode @ TA = 25°C)
Parameter
Symbol
Ratings
Unit
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Peak Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRM
VRRM
VRWM
VR
100
V
75
V
RMS Reverse Voltage
VR(RMS)
53
V
Forward Continuous Current
IFM
IO
300
mA
mA
Average Rectified Output Current
Peak Forward Surge Current @=1.0μs
@=1.0s
150
2.0
IFSM
A
1.0
Power Dissipation
PD
RθJA
200
mW
K/W
°C
Thermal Resistance Junction to Ambient
Junction, Storage Temperature
625
TJ, TSTG
150, -65 ~ +150
ELECTRICAL CHARACTERISTICS (at Ta = 25°C unless otherwise specified)
Parameters
Symbol
Min.
Max.
Unit
Test Conditions
Reverse Breakdown Voltage
V(BR)R
75
-
V
IR = 10 μA
1
25
μA
nA
VR = 75V
VR = 20V
Reverse Voltage Leakage Current
Forward Voltage
IR
-
VF1
VF2
VF3
VF4
CD
-
-
-
-
-
-
715
855
1000
1250
2.0
IF = 1mA
IF = 10mA
V
IF = 50mA
IF = 150mA
Diode Capacitance
pF
nS
VR = 0, f=1MHz
IF = IR = 10 mA, IRR=0.1xIR, RL=100Ω
Reverse Recovery Time
tRR
4
13-Nov-2008 Rev. A
Page 1 of 2
BAS16W
Small Signal Switching Diode
Elektronische Bauelemente
RATINGS AND CHARACTERISTIC CURVES
13-Nov-2008 Rev. A
Page 2 of 2
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