BAS70W [SECOS]
Surface Mount Schottky Barrier Diodes; 表面贴装肖特基势垒二极管型号: | BAS70W |
厂家: | SECOS HALBLEITERTECHNOLOGIE GMBH |
描述: | Surface Mount Schottky Barrier Diodes |
文件: | 总2页 (文件大小:217K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BAS70W/-04W/-05W/-06W
VOLTAGE 70 V, 70 mA
Surface Mount Schottky Barrier Diodes
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOT-323
FEATURES
z Low Turn-on voltage
A
L
z Low Forward Voltage - 0.75V(Max) @ IF = 10 mA
z Very Low Capacitance - Less Than 2.0pF @ 0V
For high speed switching application, circuit protection
3
3
Top View
C B
1
1
2
2
K
F
E
D
MECHANICAL DATA
H
J
G
z Case: SOT-323, Molded Plastic
z Terminals: Solderable per MIL-STD-202,Method 208
z Polarity: See Diagrams Below
z Weight: 0.004 grams (approx.)
z Mounting Position: Any
Millimeter
Millimeter
Min. Max.
0.100 REF.
0.525 REF.
REF.
REF.
Min.
Max.
2.20
2.45
1.35
1.10
A
B
C
D
2.00
2.15
1.15
0.90
G
H
J
0.08
0.15
K
-
-
E
F
1.20
0.20
1.40
0.40
L
0.525 TYP.
BAS70W Marking: K7C, BE
BAS70-04W Marking: K74
BAS70-05W Marking: K75
BAS70-06W Marking: K76
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TJ = 150°C unless otherwise noted)
TYPE NUMBER
SYMBOL
VALUES
UNITS
Reverse Voltage
VR
70
225
V
Forward Power Dissipation
@ TA = 25°C
mW
PF
Derate above 25°C
1.8
mW / °C
Forward Continuous Current
Single Forward Current
IFM
IFSM
70
mA
t ≦ 10 m
100
Operating Junction and Storage Temperature Range
TJ, TSTG
-55~150
℃
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
PARAMETERS
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
Reverse breakdown voltage
Diode capacitance
V(BR)R
CT
IR= 10µA
VR=0, f=1MHz
VR=50V
70
-
-
V
2.0
pF
0.1
Reverse voltage leakage current
IR
-
μA
VR=70V
10
IF=1.0 mA
IF=10 mA
IF=15 mA
410
750
1000
Forward voltage
VF
-
mV
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
01-June-2005 Rev. B
Page 1 of 2
BAS70W/-04W/-05W/-06W
VOLTAGE 70 V, 70 mA
Surface Mount Schottky Barrier Diodes
Elektronische Bauelemente
RATINGS AND CHARACTERISTIC CURVES
100
100
T
= 150 C
125 C
A
10
10
1.0
85 C
0.1
1.0
0.1
150 C
125 C
0.01
±40 C
85 C
25 C
25 C
10
±55 C
0.5
V , Forward Voltage (V)
0.001
0
0.1
0.2
0.3
0.4
0.6
0.7
0.8
0.9
1.0
0
20
30
40
50
60
70
V
, Reverse Voltage (V)
R
F
Figure 1. Typical Forward Voltage
Figure 2. Reverse Current versus Reverse
Voltage
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
5.0
10
15
20
25
30
35
40
45
50
V
, Reverse Voltage (V)
R
Figure 3. Typical Capacitance
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
01-June-2005 Rev. B
Page 2 of 2
相关型号:
BAS70W-04-13
Rectifier Diode, Schottky, 2 Element, 0.07A, 70V V(RRM), Silicon, ULTRA SMALL, PLASTIC PACKAGE-3
DIODES
BAS70W-04-7
Rectifier Diode, Schottky, 2 Element, 0.07A, 70V V(RRM), Silicon, ULTRA SMALL, PLASTIC PACKAGE-3
DIODES
©2020 ICPDF网 联系我们和版权申明