BC328 [SECOS]
PNP General PurposeTransistor; PNP一般PurposeTransistor
| 型号： | BC328 |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | PNP General PurposeTransistor |
| 文件： | 总3页 (文件大小：106K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BC327/BC328
PNP General PurposeTransistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
FEATURES
TO-92
Power dissipation
PCM : 0.625
Collector current
ICM
Collector-base voltage
W Tamb=25
（
℃）
:
-0.8
A
1
2
3
V(BR)CBO : BC327 -50
BC328 -30
V
1
2 3
Operating and storage junction temperature range
1. COLLECTOR
2. BASE
TJ Tstg: -55
to +150
℃
，
℃
.
EMITTER
3
.
ELECTRICAL CHARACTERISTICS (Tamb=25Я unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
VCBO
Ic= -100µA , IE=0
Collector-base breakdown voltage
-50
-30
V
V
BC327
BC328
IC= -10 mA , IB=0
IE= -10µA, IC=0
Collector-emitter breakdown voltage
VCEO
-45
-25
V
V
BC327
BC328
VEBO
ICBO
-5
V
Emitter-base breakdown voltage
Collector cut-off current
V
CB= -45V, IE=0
CB= -25V, IE=0
-0.1
-0.1
µA
µA
BC327
V
BC328
Collector cut-off current
ICEO
VCE= -40V, IB=0
CE= -20 V, IB=0
-0.2
-0.2
µA
µA
BC327
BC328
V
IEBO
VEB= -4 V, IC=0
-0.1
630
µA
Emitter cut-off current
DC current gain
hFE(1)
hFE(2)
VCE=-1V, IC= -100mA
VCE=-1V, IC= -300mA
100
40
VCE(sat)
VBE(sat)
IC=-500 mA, IB= -50 mA
IC= -500 mA, IB=-50 mA
-0.7
-1.2
V
V
Collector-emitter saturation voltage
Base-emitter saturation voltage
V
CE= -5V, IC= -10mA
260
MHz
Transition frequency
f T
f = 100MHz
hFE CLASSIFICATION
Classification
hFE1
16
25
40
100-250
60-
160-400
100-
250-630
170-
hFE2
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of 3
BC327/BC328
PNP General PurposeTransistor
Elektronische Bauelemente
-500
-400
-300
-20
-16
-12
-8
-200
IB = - 1.0mA
IB = - 0.5mA
-100
-4
IB = 0
-0
IB = 0
-1
-2
-3
-4
-5
-10
-20
-30
-40
-50
VCE[V], COLLECTOR-EMITTER VOLTAGE
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
Figure 2. Static Characteristic
1000
100
10
-10
PULSE
IC = 10 IB
PULSE
VCE = - 2.0V
VCE(sat)
-1
- 1.0V
-0.1
VBE(sat)
1
-0.1
-0.01
-0.1
-1
-10
-100
-1000
-1
-10
-100
-1000
IC[mA], COLLECTOR CURRENT
IC[mA], COLLECTOR CURRENT
Figure 3. DC current Gain
Figure 4. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
-1000
-100
-10
1000
VCE = -5.0V
VCE = -1V
PULSE
100
-1
-0.1
-0.4
10
-0.5
-0.6
-0.7
-0.8
-0.9
-1
-10
-100
VBE[V], BASE-EMITTER VOLTAGE
IC[mA], COLLECTOR CURRENT
Figure 5. Base-Emitter On Voltage
Figure 6. Gain Bandwidth Product
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 2 of 3
BC327/BC328
PNP General PurposeTransistor
Elektronische Bauelemente
TO-92 PACKAGE OUTLINE DIMENSIONS
D1
D
b
¶
e
e1
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min
Max
Min
Max
3.300
1.100
0.380
0.360
4.400
3.430
4.300
3.700
1.400
0.550
0.510
4.700
0.130
0.043
0.015
0.014
0.173
0.135
0.169
0.146
0.055
0.022
0.020
0.185
A
A1
b
c
D
D1
E
4.700
0.185
1.270TYP
0.050TYP
e
2.440
2.640
14.500
1.600
0.380
0.096
0.555
0.104
0.571
0.063
0.015
e1
L
14.100
Ö
0.000
0.000
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 3 of 3
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