BC847CW [SECOS]
NPN Plastic Encapsulate Transistor; NPN塑料封装晶体管
| 型号： | BC847CW |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | NPN Plastic Encapsulate Transistor |
| 文件： | 总4页 (文件大小：898K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BC846AW,BW
BC847AW, BW, CW
Elektronische Bauelemente
BC848AW, BW, CW
NPN Plastic Encapsulate Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Ideally suited for automatic insertion
For Switching and AF Amplifier Applications
Base
Emitter
Collector
SOT-323
A
L
3
Collector
3
MARKING
BC846AW=1A;BC846BW=1B;
Top View
C B
1
1
2
BC847AW=1E;BC847BW=1F;BC847CW=1G;
BC848AW=1J;BC848BW=1K;BC848CW=1L
2
K
F
E
Base
D
Emitter
H
J
G
Millimeter
Millimeter
REF.
REF.
Min.
Max.
2.20
2.45
1.35
1.10
1.40
0.40
Min.
0.100 REF.
0.525 REF.
0.08 0.25
Max.
A
B
C
D
E
F
1.80
1.80
1.15
0.80
1.20
0.20
G
H
J
K
L
-
-
0.650 TYP.
ABSOLUTE MAXIMUM RATINGS ( TA = 25°C unless otherwise noted )
PARAMETER
SYMBOL
RATINGS
UNIT
BC846W
BC847W
BC848W
BC846W
BC847W
BC848W
BC846W
BC847W
BC848W
80
Collector to Base Voltage
VCBO
50
V
30
65
Collector to Emitter Voltage
Emitter to Base Voltage
VCEO
45
V
V
30
6
VEBO
6
5
0.1
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
IC
PC
A
mW
℃
150
TJ, TSTG
150, -55 ~ 150
24-Mar-2010 Rev. A
Page 1 of 4
BC846AW,BW
BC847AW, BW, CW
Elektronische Bauelemente
BC848AW, BW, CW
NPN Plastic Encapsulate Transistor
ELECTRICAL CHARACTERISTICS ( Tamb = 25°C unless otherwise specified )
PARAMETER
SYMBOL
MIN. TYP. MAX. UNIT TEST CONDITIONS
BC846W
BC847W
BC848W
BC846W
80
Collector to Base Breakdown Voltage
VCBO
50
30
65
-
-
-
-
-
-
V
V
V
IC = 10 uA, IE = 0
IC = 10 mA, IB = 0
IE = 1 μA, IC = 0
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
VCEO
BC847W
BC848W
BC846W
BC847W
BC848W
45
30
6
VEBO
6
5
Collector Cutoff Current
ICBO
-
-
-
15
0.25
0.6
-
nA
V
VCB = 30 V
-
IC = 10mA, IB = 0.5 mA
IC = 100mA, IB = 5 mA
IC = 10mA, IB = 0.5 mA
IC = 100mA, IB = 5 mA
Collector to Emitter Saturation Voltage
VCE(sat)
-
-
-
0.7
0.9
660
-
Base to Emitter Saturation Voltage
Base to Emitter Voltage
VBE(sat)
V
-
580
-
-
700
770
VCE = 5 V, IC = 2 mA
VBE(on)
mV
VCE = 5 V, IC = 10 mA
BC846AW,BC847AW,BC848AW
90
150
270
hFE(1)
-
-
VCE = 5 V, IC = 10 μA
BC846BW,BC847BW,BC848BW
BC847CW,BC848CW
DC Current Gain
BC846AW,BC847AW,BC848AW
110
200
420
220
450
800
BC846BW,BC847BW,BC848BW
BC847CW,BC848CW
hFE(2)
-
VCE = 5 V, IC = 2 mA
Transition Frequency
fT
100
-
-
-
-
MHz VCE = 5 V, IC = 10 mA, f = 100MHz
Collector Output Capacitance
BC846AW,BC847AW,BC848AW
COb
4.5
-
pF
VCB = 10 V, f=1MHz
V
CE= 5 V, IC= 0.2 mA,
f= 1KHz, RS= 2 KΩ,
BW= 200Hz
BC846BW,BC847BW,BC848BW
BC847CW,BC848CW
10
Noise Figure
NF
-
-
dB
4
24-Mar-2010 Rev. A
Page 2 of 4
BC846AW,BW
BC847AW, BW, CW
Elektronische Bauelemente
BC848AW, BW, CW
NPN Plastic Encapsulate Transistor
CHARACTERISTIC CURVES
24-Mar-2010 Rev. A
Page 3 of 4
BC846AW,BW
BC847AW, BW, CW
Elektronische Bauelemente
BC848AW, BW, CW
NPN Plastic Encapsulate Transistor
CHARACTERISTIC CURVES
24-Mar-2010 Rev. A
Page 4 of 4
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