首页 |元器件品牌

BC847C [SECOS]

BC846A;
BC847C
型号： BC847C
厂家： SECOS HALBLEITERTECHNOLOGIE GMBH    SECOS HALBLEITERTECHNOLOGIE GMBH
描述：

BC846A

晶体 晶体管 光电二极管 放大器
文件： 总3页 (文件大小：307K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
BC846A, B  
BC847A, B, C  
BC848A, B, C  
Elektronische Bauelemente  
A suffix of "-C" specifies halogen & lead-free  
SOT-23  
Min  
FEATURES  
A
Dim  
A
Max  
L
n
2.800 3.040  
1.200 1.400  
0.890 1.110  
0.370 0.500  
1.780 2.040  
0.013 0.100  
0.085 0.177  
0.450 0.600  
0.890 1.020  
2.100 2.500  
0.450 0.600  
General Purpose Transistor NPN Type  
n
B
3
Collect current : 0.1A  
S
C
Top View  
O
O
B
n
n
C
Operating Temp. : -55 C ~ +150 C  
RoHS compliant product  
1
2
D
V
G
G
H
COLLE CTOR  
3
J
3
K
H
J
D
K
1
L
1
BAS E  
S
V
2
2
All Dimension in mm  
E MITTE R  
ELECTRICAL CHARACTERISTICS˄Tamb=25ć  
unless otherwise specified˅  
Parameter  
Symbol  
Test conditions  
MIN  
MAX  
UNIT  
Collector-base breakdown voltage  
BC846  
BC847  
BC848  
BC846  
BC847  
BC848  
80  
50  
30  
65  
45  
30  
VCBO  
V
Ic= 10 ­Aˈ IE=0  
Collector-emitter breakdown voltage  
VCEO  
VEBO  
ICBO  
Ic= 10 mAˈ IB=0  
V
V
Emitter-base breakdown voltage  
Collector cut-off current  
6
IE= 10 ­Aˈ IC=0  
BC846  
BC847  
BC848  
BC846  
BC847  
BC848  
VCB= 70 V , IE=0  
VCB= 50 V , IE=0  
0.1  
­A  
VCB= 30 V , IE=0  
VCE= 60 V , IB=0  
VCE= 45 V , IB=0  
VCE= 30 V , IB=0  
Collector cut-off current  
ICEO  
IEBO  
HFE  
0.1  
0.1  
­A  
­A  
Emitter cut-off current  
VEB= 5 V ,  
IC=0  
DC current gain  
BC846A,847A,848A  
BC846B,847B,848B  
BC847C,BC848C  
110  
200  
420  
220  
450  
800  
VCE= 5V, IC= 2mA  
˄
1
˅
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
V
CE(sat)  
BE(sat)  
IC=100mA, IB= 5 mA  
0.5  
1.1  
V
V
V
IC= 100 mA, IB= 5mA  
VCE= 5 V, IC= 10mA  
Transition frequency  
100  
MHz  
fT  
f=100MHz  
DEVICE MARKING  
BC846A=1A; BC846B=1B; BC847A=1E; BC847B=1F; BC847C=1G; BC848A=1J; BC848B=1K; BC848C=1L  
http://www.SeCoSGmbH.com  
Any changing of specification will not be informed individual  
01-Jun-2004 Rev.B  
Page 1 of 3  
BC846A, B  
BC847A, B, C  
BC848A, B, C  
Elektronische Bauelemente  
Typical Characteristics  
BC846A/B, BC847A/B, BC848A/B  
2.0  
1.5  
1.0  
0.9  
V
T
= 10 V  
T
A
= 25°C  
CE  
= 25°C  
A
0.8  
0.7  
V
@ I /I = 10  
C B  
BE(sat)  
1.0  
0.8  
V @ V = 10 V  
BE(on) CE  
0.6  
0.5  
0.4  
0.3  
0.6  
0.4  
0.3  
0.2  
0.1  
V
@ I /I = 10  
C B  
CE(sat)  
0.2  
0
0.1  
0.2  
0.5 1.0  
2.0  
5.0 10  
20  
50 100 200  
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100  
I , COLLECTOR CURRENT (mAdc)  
C
I , COLLECTOR CURRENT (mAdc)  
C
Figure 1. Normalized DC Current Gain  
Figure 2. “Saturation” and “On” Voltages  
2.0  
1.6  
1.2  
0.8  
0.4  
0
1.0  
1.2  
1.6  
2.0  
2.4  
2.8  
T
= 25°C  
-55°C to +125°C  
A
I
C
= 200 mA  
I
=
I
=
I
C
= 50 mA  
I = 100 mA  
C
C
C
10 mA 20 mA  
0.02  
0.1  
1.0  
10 20  
0.2  
1.0  
10  
100  
I , BASE CURRENT (mA)  
B
I , COLLECTOR CURRENT (mA)  
C
Figure 3. Collector Saturation Region  
Figure 4. Base–Emitter Temperature Coefficient  
10  
7.0  
5.0  
400  
300  
T
A
= 25°C  
200  
C
ib  
V
T
= 10 V  
CE  
= 25°C  
100  
80  
3.0  
2.0  
A
C
ob  
60  
40  
30  
1.0  
20  
0.4 0.6 0.8 1.0  
2.0  
4.0 6.0 8.0 10  
20  
40  
0.5 0.7 1.0  
2.0 3.0  
5.0 7.0 10  
20 30  
50  
V , REVERSE VOLTAGE (VOLTS)  
R
I , COLLECTOR CURRENT (mAdc)  
C
Figure 5. Capacitances  
Figure 6. Current–Gain – Bandwidth Product  
http://www.SeCoSGmbH.com  
Any changing of specification will not be informed individual  
01-Jun-2004 Rev.B  
Page 2 of 3  
BC846A, B  
BC847A, B, C  
BC848A, B, C  
Elektronische Bauelemente  
BC846A/B, BC847A/B, BC848A/B  
1.0  
0.8  
T
= 25°C  
A
V
T
= 5 V  
CE  
= 25°C  
A
V
@ I /I = 10  
C B  
BE(sat)  
2.0  
1.0  
0.5  
0.6  
0.4  
0.2  
0
V
@ V = 5.0 V  
CE  
BE  
0.2  
V
@ I /I = 10  
C B  
CE(sat)  
0.1 0.2  
1.0  
10  
100  
0.2  
0.5 1.0 2.0  
5.0  
10 20  
50 100 200  
I , COLLECTOR CURRENT (mA)  
C
I , COLLECTOR CURRENT (mA)  
C
Figure 7. DC Current Gain  
Figure 8. “On” Voltage  
2.0  
-1.0  
-1.4  
-1.8  
-2.2  
-2.6  
-3.0  
T
= 25°C  
A
1.6  
1.2  
0.8  
0.4  
0
100 mA  
200 mA  
20 mA  
50 mA  
θ
VB  
for V  
BE  
-55°C to 125°C  
I
=
C
10 mA  
0.02 0.05 0.1 0.2  
0.5  
1.0 2.0  
5.0 10  
20  
0.2  
0.5 1.0 2.0  
5.0  
10 20  
50  
100 200  
I , BASE CURRENT (mA)  
B
I , COLLECTOR CURRENT (mA)  
C
Figure 9. Collector Saturation Region  
Figure 10. Base–Emitter Temperature Coefficient  
40  
T
A
= 25°C  
V
T
= 5 V  
CE  
= 25°C  
500  
A
20  
10  
C
ib  
200  
100  
50  
6.0  
4.0  
C
ob  
20  
2.0  
0.1 0.2  
0.5  
1.0 2.0  
5.0  
10 20  
50  
100  
1.0  
5.0 10  
50 100  
V , REVERSE VOLTAGE (VOLTS)  
R
I , COLLECTOR CURRENT (mA)  
C
Figure 11. Capacitance  
Figure 12. Current–Gain – Bandwidth Product  
http://www.SeCoSGmbH.com  
Any changing of specification will not be informed individual  
01-Jun-2004 Rev.B  
Page 3 of 3  

相关型号：

BC847C(SOT-23)

 Transistor
JCST

BC847C,215

 TRANS NPN 45V 0.1A SOT23
ETC

BC847C,235

 TRANS NPN 45V 0.1A SOT23
ETC

BC847C-13

 Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3
DIODES

BC847C-13-F

 NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR IN SOT23
DIODES

BC847C-1GZ

 SOT23 NPN SILICON PLANAR
ZETEX

BC847C-7

 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
DIODES

BC847C-7-F

 NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR IN SOT23
DIODES

BC847C-G

 Small Signal Transistor
COMCHIP

BC847C-GS08

 Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3
VISHAY

BC847C-GS18

 Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3
VISHAY

BC847C-MR

 TRANSISTOR BC847C MINIREEL 500PCS
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明